Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition

D. J. Rogers; F. Hosseini Teherani; T. Monteiro; M. Soares; A. Neves; M. Carmo; S. Pereira; M. R. Correia; A. Lusson; E. Alves; N. P. Barradas; J. K. Morrod; K. A. Prior; P. Kung; A. Yasan; M. Razeghi

doi:10.1002/pssc.200564756

Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition

D. J. Rogers^*, F. Hosseini Teherani, T. Monteiro, M. Soares, A. Neves, M. Carmo, S. Pereira, M. R. Correia, A. Lusson, E. Alves, N. P. Barradas, J. K. Morrod, K. A. Prior, P. Kung, A. Yasan, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

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Abstract

In this work we investigated ZnO films grown on semi-insulating (100) GaAs substrates by pulsed laser deposition. Samples were studied using techniques including X-ray diffraction (XRD), scanning electron microscopy, atomic force microscopy, Raman spectroscopy, temperature dependent photoluminescence, C-V profiling and temperature dependent Hall measurements. The Hall measurements showed a clear p-type response with a relatively high mobility (∼260 cm ²/Vs) and a carrier concentration of ∼1.8 × 10¹⁹ cm^-3. C-V profiling confirmed a p-type response. XRD and Raman spectroscopy indicated the presence of (0002) oriented wurtzite ZnO plus secondary phase(s) including (101) oriented Zn₂As₂O ₇. The results suggest that significant atomic mixing was occurring at the film/substrate interface for films grown at substrate temperatures of 450°C (without post-annealing).

Original language	English (US)
Pages (from-to)	1038-1041
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Volume	3
Issue number	4
DOIs	https://doi.org/10.1002/pssc.200564756
State	Published - 2006
Event	12th International Conference on II-VI Compounds - Warsaw, Poland Duration: Sep 12 2005 → Sep 16 2005

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200564756

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Rogers, D. J., Teherani, F. H., Monteiro, T., Soares, M., Neves, A., Carmo, M., Pereira, S., Correia, M. R., Lusson, A., Alves, E., Barradas, N. P., Morrod, J. K., Prior, K. A., Kung, P., Yasan, A., & Razeghi, M. (2006). Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition. Physica Status Solidi C: Conferences, 3(4), 1038-1041. https://doi.org/10.1002/pssc.200564756

@article{d90f00ede14c43db8daa71dfe5c8decc,

title = "Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition",

abstract = "In this work we investigated ZnO films grown on semi-insulating (100) GaAs substrates by pulsed laser deposition. Samples were studied using techniques including X-ray diffraction (XRD), scanning electron microscopy, atomic force microscopy, Raman spectroscopy, temperature dependent photoluminescence, C-V profiling and temperature dependent Hall measurements. The Hall measurements showed a clear p-type response with a relatively high mobility (∼260 cm 2/Vs) and a carrier concentration of ∼1.8 × 1019 cm-3. C-V profiling confirmed a p-type response. XRD and Raman spectroscopy indicated the presence of (0002) oriented wurtzite ZnO plus secondary phase(s) including (101) oriented Zn2As2O 7. The results suggest that significant atomic mixing was occurring at the film/substrate interface for films grown at substrate temperatures of 450°C (without post-annealing).",

author = "Rogers, {D. J.} and Teherani, {F. Hosseini} and T. Monteiro and M. Soares and A. Neves and M. Carmo and S. Pereira and Correia, {M. R.} and A. Lusson and E. Alves and Barradas, {N. P.} and Morrod, {J. K.} and Prior, {K. A.} and P. Kung and A. Yasan and M. Razeghi",

year = "2006",

doi = "10.1002/pssc.200564756",

language = "English (US)",

volume = "3",

pages = "1038--1041",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

publisher = "Wiley-VCH Verlag",

number = "4",

note = "12th International Conference on II-VI Compounds ; Conference date: 12-09-2005 Through 16-09-2005",

}

Rogers, DJ, Teherani, FH, Monteiro, T, Soares, M, Neves, A, Carmo, M, Pereira, S, Correia, MR, Lusson, A, Alves, E, Barradas, NP, Morrod, JK, Prior, KA, Kung, P, Yasan, A & Razeghi, M 2006, 'Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition', Physica Status Solidi C: Conferences, vol. 3, no. 4, pp. 1038-1041. https://doi.org/10.1002/pssc.200564756

TY - JOUR

T1 - Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition

AU - Rogers, D. J.

AU - Teherani, F. Hosseini

AU - Monteiro, T.

AU - Soares, M.

AU - Neves, A.

AU - Carmo, M.

AU - Pereira, S.

AU - Correia, M. R.

AU - Lusson, A.

AU - Alves, E.

AU - Barradas, N. P.

AU - Morrod, J. K.

AU - Prior, K. A.

AU - Kung, P.

AU - Yasan, A.

AU - Razeghi, M.

PY - 2006

Y1 - 2006

N2 - In this work we investigated ZnO films grown on semi-insulating (100) GaAs substrates by pulsed laser deposition. Samples were studied using techniques including X-ray diffraction (XRD), scanning electron microscopy, atomic force microscopy, Raman spectroscopy, temperature dependent photoluminescence, C-V profiling and temperature dependent Hall measurements. The Hall measurements showed a clear p-type response with a relatively high mobility (∼260 cm 2/Vs) and a carrier concentration of ∼1.8 × 1019 cm-3. C-V profiling confirmed a p-type response. XRD and Raman spectroscopy indicated the presence of (0002) oriented wurtzite ZnO plus secondary phase(s) including (101) oriented Zn2As2O 7. The results suggest that significant atomic mixing was occurring at the film/substrate interface for films grown at substrate temperatures of 450°C (without post-annealing).

AB - In this work we investigated ZnO films grown on semi-insulating (100) GaAs substrates by pulsed laser deposition. Samples were studied using techniques including X-ray diffraction (XRD), scanning electron microscopy, atomic force microscopy, Raman spectroscopy, temperature dependent photoluminescence, C-V profiling and temperature dependent Hall measurements. The Hall measurements showed a clear p-type response with a relatively high mobility (∼260 cm 2/Vs) and a carrier concentration of ∼1.8 × 1019 cm-3. C-V profiling confirmed a p-type response. XRD and Raman spectroscopy indicated the presence of (0002) oriented wurtzite ZnO plus secondary phase(s) including (101) oriented Zn2As2O 7. The results suggest that significant atomic mixing was occurring at the film/substrate interface for films grown at substrate temperatures of 450°C (without post-annealing).

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DO - 10.1002/pssc.200564756

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AN - SCOPUS:33646251601

SN - 1610-1634

VL - 3

SP - 1038

EP - 1041

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 4

T2 - 12th International Conference on II-VI Compounds

Y2 - 12 September 2005 through 16 September 2005

ER -

Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition

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