TY - JOUR
T1 - Investigations of ZnO thin films grown on c-Al2O3 by pulsed laser deposition in N2 + O2 ambient
AU - Rogers, D. J.
AU - Look, D. C.
AU - Téhérani, F. Hosseini
AU - Minder, K.
AU - Razeghi, M.
AU - Largeteau, A.
AU - Demazeau, G.
AU - Morrod, J.
AU - Prior, K. A.
AU - Lusson, A.
AU - Hassani, S.
N1 - Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2008
Y1 - 2008
N2 - ZnO films were deposited on c-Al2O3 using pulsed laser deposition both with and without N2 in the growth ambient. X-ray diffraction revealed poorer crystal quality and surface morphology for one-step growths with N2 in the ambient. A marked improvement in both the crystallographic and surface quality was obtained through use of two-step growths employing nominally undoped ZnO buffer layers prior to growth with N2 in the ambient. All films showed majority n-type conduction in Hall measurements. Post-annealing for 30 minutes at 600 °C in O2 systematically reduced both the carrier concentration and the conductivity. A base room temperature carrier concentration of ∼ 1016 cm -3 was linked to Al diffusing from the substrate. 4.2 K photoluminescence spectra exhibited blue bands associated with the growths having N2 in the ambient. Temperature dependent Hall measurements were consistent with N being incorporated in the films. Processed devices did not, however, show rectifying behaviour or electroluminescence.
AB - ZnO films were deposited on c-Al2O3 using pulsed laser deposition both with and without N2 in the growth ambient. X-ray diffraction revealed poorer crystal quality and surface morphology for one-step growths with N2 in the ambient. A marked improvement in both the crystallographic and surface quality was obtained through use of two-step growths employing nominally undoped ZnO buffer layers prior to growth with N2 in the ambient. All films showed majority n-type conduction in Hall measurements. Post-annealing for 30 minutes at 600 °C in O2 systematically reduced both the carrier concentration and the conductivity. A base room temperature carrier concentration of ∼ 1016 cm -3 was linked to Al diffusing from the substrate. 4.2 K photoluminescence spectra exhibited blue bands associated with the growths having N2 in the ambient. Temperature dependent Hall measurements were consistent with N being incorporated in the films. Processed devices did not, however, show rectifying behaviour or electroluminescence.
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U2 - 10.1002/pssc.200779315
DO - 10.1002/pssc.200779315
M3 - Conference article
AN - SCOPUS:67349141774
VL - 5
SP - 3084
EP - 3087
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
SN - 1862-6351
IS - 9
T2 - 34th International Symposium on Compound Semiconductors, ISCS-2007
Y2 - 15 October 2007 through 18 October 2007
ER -