(Invited) Selective Area Etching and Doping of GaN for High-Power Applications

Bingjun Li, Sizhen Wang, Alexander S. Chang, Lincoln Lauhon, Yafei Liu, Balaji Raghothamachar, Michael Dudley, Jung Han

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Selective area doping (SAD) of gallium nitride (GaN), especially p-type doping, is desirable for high-power applications but yet challenging. The lack of this process greatly limits the power device design flexibility, so the reported device figure-of-merits are well below the theoretical calculation/simulation. Selective-area etching followed by regrowth is the approach we choose to overcome this obstacle. For the etching step, instead of adopting conventional Cl-based plasma etching process, we explored in-situ TBCl etching, studied the etching mechanism, and optimized the process to prepare smooth surface and trenches. Room-temperature PL, XPS, and electrical characterizations indicate that TBCl etching creates a low-defect surface. Moreover, selective area growth of p-GaN in a patterned trench was analyzed by atom probe tomography (APT). We found a reverse proportionality between the local growth rate and Mg doping concentration, and the development of fast-growing semi-polar facet from the sidewall. As a consequence, non-uniform Mg doping in non-planar growth is observed.

Original languageEnglish (US)
Title of host publication240th ECS Meeting - Gallium Nitride and Silicon Carbide Power Technologies 11
PublisherIOP Publishing Ltd.
Pages103-112
Number of pages10
Edition7
ISBN (Electronic)9781607685395
DOIs
StatePublished - 2021
Event240th ECS Meeting - Orlando, United States
Duration: Oct 10 2021Oct 14 2021

Publication series

NameECS Transactions
Number7
Volume104
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

Conference240th ECS Meeting
Country/TerritoryUnited States
CityOrlando
Period10/10/2110/14/21

ASJC Scopus subject areas

  • Engineering(all)

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