(Invited) Selective Area Etching and Doping of GaN for High-Power Applications

Keyphrases

• Gallium Nitride 100%
• Selective-area 100%
• High Power Applications 100%
• Atom Probe Tomography 33%
• Calculation Simulation 33%
• Room Temperature 33%
• Electrical Characterization 33%
• In Situ 33%
• Non-planar 33%
• Growth Rate 33%
• Fast-growing 33%
• Regrowth 33%
• Device Design 33%
• Power Device 33%
• Smooth Surface 33%
• Design Flexibility 33%
• Surface Defects 33%
• Selective Area Growth 33%
• Sidewall 33%
• P-type Doping 33%
• XPS Characterization 33%
• Polar Facets 33%
• Mg Doping 33%
• Local Growth 33%
• Low Defect 33%
• Semi-polar 33%
• Etching Mechanism 33%
• Planar Growth 33%
• Selective Area Doping 33%
• Mg Doping Concentration 33%
• Plasma Etching Process 33%

Material Science

• Gallium Nitride 100%
• Theoretical Calculation 33%
• Tomography 33%
• Atom Probe 33%
• Plasma Etching 33%
• Power Device 33%
• Surface (Surface Science) 33%
• Surface Defect 33%