Ion-assisted molecular beam epitaxy of GaAs on Si(100)

C. H. Choi*, R. Ai, S. A. Barnett

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

GaAs was grown by molecular beam epitaxy (MBE) and ion-assisted MBE on Si(100) substrates. Three-dimensional (3D) island nucleation, observed during MBE growth, was eliminated during ion-assisted MBE when the ion energy E was >25 eV and the product of E and the current density J was ≈6-12 eV mA/cm2. Increasing EJ to ≈15 eV mA/ cm2 resulted in excessive ion damage. Decreasing the substrate temperature from 280 to 580° C during ion-assisted MBE yielded a slight decrease in surface roughness, and flatter surfaces were obtained for lower As4/Ga flux ratios. The suppression of 3D island nucleation led to an improvement in the crystalline perfection of thicker GaAs films. For example, the x-ray diffraction rocking-curve full-width-at-half-maximum values for 0.5 μm thick films grown at 380° C decreased from 1700 arcsec to 1350 arcsec when ion irradiation was used during nucleation. IAMBE allowed nucleation of thin, relatively flat-surfaced GaAs films even at 580° C, resulting in FWHM values of 1850 arcsec for 0.14 /μm thick films.

Original languageEnglish (US)
Pages (from-to)1041-1046
Number of pages6
JournalJournal of Electronic Materials
Volume21
Issue number11
DOIs
StatePublished - Nov 1 1992

Keywords

  • Defect densities
  • Film nucleation
  • GaAs on Si
  • Ion-assisted molecular beam epitaxy
  • TEM

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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