Ion-beam doping during molecular beam epitaxy

S. A. Barnett*, J. E. Greene, J. E. Sundgren

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Compositional modifications on the atomic scale, made possible through molecular beam epitaxy, have opened up a new range of semiconductor devices. Some recent work has investigated the addition of ion dopants during molecular beam epitaxy, with the goal of improving electrical and optical properties.

Original languageEnglish (US)
Pages (from-to)16-19
Number of pages4
JournalJOM
Volume41
Issue number4
DOIs
StatePublished - Apr 1 1989

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

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