Ion-beam doping during molecular beam epitaxy

S. A. Barnett; J. E. Greene; J. E. Sundgren

doi:10.1007/BF03220192

Ion-beam doping during molecular beam epitaxy

S. A. Barnett^*, J. E. Greene, J. E. Sundgren

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Compositional modifications on the atomic scale, made possible through molecular beam epitaxy, have opened up a new range of semiconductor devices. Some recent work has investigated the addition of ion dopants during molecular beam epitaxy, with the goal of improving electrical and optical properties.

Original language	English (US)
Pages (from-to)	16-19
Number of pages	4
Journal	JOM
Volume	41
Issue number	4
DOIs	https://doi.org/10.1007/BF03220192
State	Published - Apr 1989

ASJC Scopus subject areas

General Materials Science
General Engineering

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10.1007/BF03220192

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title = "Ion-beam doping during molecular beam epitaxy",

abstract = "Compositional modifications on the atomic scale, made possible through molecular beam epitaxy, have opened up a new range of semiconductor devices. Some recent work has investigated the addition of ion dopants during molecular beam epitaxy, with the goal of improving electrical and optical properties.",

author = "Barnett, {S. A.} and Greene, {J. E.} and Sundgren, {J. E.}",

year = "1989",

month = apr,

doi = "10.1007/BF03220192",

language = "English (US)",

volume = "41",

pages = "16--19",

journal = "JOM",

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publisher = "Minerals, Metals and Materials Society",

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T1 - Ion-beam doping during molecular beam epitaxy

AU - Barnett, S. A.

AU - Greene, J. E.

AU - Sundgren, J. E.

PY - 1989/4

Y1 - 1989/4

N2 - Compositional modifications on the atomic scale, made possible through molecular beam epitaxy, have opened up a new range of semiconductor devices. Some recent work has investigated the addition of ion dopants during molecular beam epitaxy, with the goal of improving electrical and optical properties.

AB - Compositional modifications on the atomic scale, made possible through molecular beam epitaxy, have opened up a new range of semiconductor devices. Some recent work has investigated the addition of ion dopants during molecular beam epitaxy, with the goal of improving electrical and optical properties.

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JO - JOM

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Ion-beam doping during molecular beam epitaxy

Abstract

ASJC Scopus subject areas

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