TY - JOUR
T1 - Ion beam synthesis of SiC by C implantation into SIMOX(1 1 1)
AU - dos Reis, Roberto
AU - Maltez, R. L.
AU - Boudinov, H.
N1 - Copyright:
Copyright 2009 Elsevier B.V., All rights reserved.
PY - 2009/5/1
Y1 - 2009/5/1
N2 - We report the conversion of a 65 nm Si(1 1 1) overlayer of a SIMOX(1 1 1) into 30-45 nm SiC by 40 keV carbon implantation into it. High temperature implantation (600 °C) through a SiO2 cap, 1250 °C post-implantation annealing under Ar ambient (with 1% of O2), and etching are the base for the present synthesis. Sequential C implantations (fluence steps of about 5 × 1016 cm-2), followed by 1250 °C annealing, has allowed to estimate the minimum C fluence to reach the stoichiometric composition as ∼2.3 × 1017 cm-2. Rutherford Backscattering Spectrometry was employed to measure layer composition evolution. A two-sublayers structure is observed in the synthesized SiC, being the superficial one richer in Si. Transmission electron microscopy has shown that a single-step implantation up to the same minimum fluence results in better structural quality. For a much higher C fluence (4 × 1017 cm-2), a whole stoichiometric layer is obtained, with reduction of structural quality.
AB - We report the conversion of a 65 nm Si(1 1 1) overlayer of a SIMOX(1 1 1) into 30-45 nm SiC by 40 keV carbon implantation into it. High temperature implantation (600 °C) through a SiO2 cap, 1250 °C post-implantation annealing under Ar ambient (with 1% of O2), and etching are the base for the present synthesis. Sequential C implantations (fluence steps of about 5 × 1016 cm-2), followed by 1250 °C annealing, has allowed to estimate the minimum C fluence to reach the stoichiometric composition as ∼2.3 × 1017 cm-2. Rutherford Backscattering Spectrometry was employed to measure layer composition evolution. A two-sublayers structure is observed in the synthesized SiC, being the superficial one richer in Si. Transmission electron microscopy has shown that a single-step implantation up to the same minimum fluence results in better structural quality. For a much higher C fluence (4 × 1017 cm-2), a whole stoichiometric layer is obtained, with reduction of structural quality.
KW - C implantation into SIMOX
KW - Ion beam synthesis
KW - RBS/C
KW - SiC on Si
KW - TEM
UR - http://www.scopus.com/inward/record.url?scp=65249177304&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=65249177304&partnerID=8YFLogxK
U2 - 10.1016/j.nimb.2009.01.164
DO - 10.1016/j.nimb.2009.01.164
M3 - Article
AN - SCOPUS:65249177304
SN - 0168-583X
VL - 267
SP - 1281
EP - 1284
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
IS - 8-9
ER -