Ion beam synthesis of SiC by C implantation into SIMOX(1 1 1)

Roberto dos Reis, R. L. Maltez*, H. Boudinov

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

We report the conversion of a 65 nm Si(1 1 1) overlayer of a SIMOX(1 1 1) into 30-45 nm SiC by 40 keV carbon implantation into it. High temperature implantation (600 °C) through a SiO2 cap, 1250 °C post-implantation annealing under Ar ambient (with 1% of O2), and etching are the base for the present synthesis. Sequential C implantations (fluence steps of about 5 × 1016 cm-2), followed by 1250 °C annealing, has allowed to estimate the minimum C fluence to reach the stoichiometric composition as ∼2.3 × 1017 cm-2. Rutherford Backscattering Spectrometry was employed to measure layer composition evolution. A two-sublayers structure is observed in the synthesized SiC, being the superficial one richer in Si. Transmission electron microscopy has shown that a single-step implantation up to the same minimum fluence results in better structural quality. For a much higher C fluence (4 × 1017 cm-2), a whole stoichiometric layer is obtained, with reduction of structural quality.

Original languageEnglish (US)
Pages (from-to)1281-1284
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume267
Issue number8-9
DOIs
StatePublished - May 1 2009

Keywords

  • C implantation into SIMOX
  • Ion beam synthesis
  • RBS/C
  • SiC on Si
  • TEM

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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