Ion beam technique for real-time measurement of two-dimensional islands during epitaxial growth

P. M. DeLuca*, Scott A Barnett

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

In this paper, we describe a technique for real-time measurement of two-dimensional (2D) islands during molecular beam epitaxy, using GaAs(001) growth as the test case. In this technique, an ion beam impinges at a glancing angle relative to the sample surface, and the specularly scattered ion current is measured. The current is a quantitative probe of surface defects, e.g., adatoms and step edges, which interrupt the locally flat surface needed for a specular reflection. Nucleation is detected during the early stages of GaAs growth when the measured adatom density drops below the expected value, because of adatom self-shadowing in 2D nuclei. After deposition, there is a relatively fast current recovery - related to adatom diffusion - combined with a much slower recovery - explained by a decrease in step-edge density as the 2D island density decreases. Good fits to the recovery data were obtained by assuming power-law island coarsening.

Original languageEnglish (US)
JournalSurface Science
Volume426
Issue number1
DOIs
StatePublished - Jan 1 1999

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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