ION-SURFACE INTERACTIONS DURING VAPOR PHASE CRYSTAL GROWTH BY SPUTTERING, MBE, AND PLASMA ENHANCED CVD: APPLICATIONS TO SEMICONDUCTORS.

J. E. Greene*, S. A. Barnett

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low energy particle bombardment of the substrate and growing film, which has traditionally been associated with sputter deposition, has also been used with considerable success in other vapor phase film growth techniques such as MBE and PA-CVD. It is shown that energetic particle-surface interactions, involving constituents, dopant impurities, and/or inert gas ions, allow additional control over film nucleation and growth kinetics, elemental incorporation probabilities, and film chemistry.

Original languageEnglish (US)
Title of host publicationUnknown Host Publication Title
EditorsToshinori Takagi
PublisherKyoto Univ, Ion Engineering Experimental Lab
Pages311-320
Number of pages10
StatePublished - Dec 1 1982

ASJC Scopus subject areas

  • Engineering(all)

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