Abstract
Low energy particle bombardment of the substrate and growing film, which has traditionally been associated with sputter deposition, has also been used with considerable success in other vapor phase film growth techniques such as MBE and PA-CVD. It is shown that energetic particle-surface interactions, involving constituents, dopant impurities, and/or inert gas ions, allow additional control over film nucleation and growth kinetics, elemental incorporation probabilities, and film chemistry.
Original language | English (US) |
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Title of host publication | Unknown Host Publication Title |
Editors | Toshinori Takagi |
Publisher | Kyoto Univ, Ion Engineering Experimental Lab |
Pages | 311-320 |
Number of pages | 10 |
State | Published - Dec 1 1982 |
ASJC Scopus subject areas
- General Engineering