ION-SURFACE INTERACTIONS DURING VAPOR PHASE CRYSTAL GROWTH BY SPUTTERING, MBE, AND PLASMA-ENHANCED CVD: APPLICATIONS TOSEMICONDUCTORS.

J. E. GREENE*, S. A. BARNETT

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

120 Scopus citations

Abstract

THE EFFECTS OF LOW-ENERGY PARTICLE BOMBARDMENT OF GROWING FILMS DURING VAPOR PHASE EPITAXY ARE EXAMINED IN SOME DETAIL.ION BOMBARDMENT PLAYS AN IMPORTANT AND SOMETIMES DOMINANT ROLE IN CONTROLLING THE GROWTH KINETICS AND PHYSICAL PROPERTIES OF FILMS DEPOSITED BY GLOW DISCHARGE AND ION BEAM SPUTTERDEPOSITION, MOLECULAR BEAM EPITAXY USING ACCELERATED DOPANTS, AND PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION. ION-SURFACE INTERACTION EFFECTS, INCLUDING TRAPPING, SPUTTERING, PREFERENTIAL SPUTTERING, AND COLLISIONAL MIXING, ARE USED TO INTERPRET AND MODEL EXPERIMENTAL RESULTS CONCERNING THE EFFECTS OF LOW-ENERGY PARTICLE BOMBARDMENT ON NUCLEATION, FILM GROWTH, ENHANCED DIFFUSION AT INTERFACES, THE ELEMENTAL INCORPORATION PROBABILITIES. FINALLY, RECENT RESULTS ON THE GROWTH OFUNIQUE SINGLE-CRYSTAL METASTABLE SEMICONDUCTING ALLOYS ARE DISCUSSED.

Original languageEnglish (US)
Pages (from-to)285-302
Number of pages18
JournalJ VAC SCI TECHNOL
VolumeV 21
Issue numberN 2
StatePublished - Jan 1 1982
EventPROC OF THE ANNU CONF ON THE PHYS AND CHEM OF SEMICOND INTERFACES, 9TH - Pacific Grove, CA, USA
Duration: Jan 27 1982Jan 29 1982

ASJC Scopus subject areas

  • Engineering(all)

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