ION-X Dopant Gas Delivery System Performance Characterization at Axcelis

J. Arnó, Omar k Farha, W. Morris, P. W. Siu, G. M. Tom, M. H. Weston, P. E. Fuller

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The performance of ION-X delivering arsine (AsH3), phosphine (PH3), and boron trifluoride (BF3) was evaluated at the Axcelis Advanced Technology Center. ION-X is a sub-atmospheric dopant gas delivery system specifically designed for ion implantation, and the first commercial product that uses Metal-Organic Framework (MOF) materials. MOF materials are a new class of adsorbents with unprecedented surface areas and uniform pore sizes that can be precisely customized to the specific properties of electronic gases. ION-X cylinders were installed in high current implanters and their performance was compared to the incumbent UpTime® gas delivery systems. In all cases, the target dose was 5 × 1015 at/cm2 with beam energies of 40 keV, 20 keV and 15 keV for As+, P+, and BF2+ ion implants respectively. In-process and on-wafer results of the MOF-based dopant gases compared positively to conventional source gases. The issue of metal contamination was investigated in detail. Specifically, beam and wafer contamination levels (both surface and energetic) were evaluated and compared to the reference qualified products. In all cases the metal levels were below specification limits matching the performance of the ultrahigh purity reference product.

Original languageEnglish (US)
Title of host publication2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings
EditorsHeiner Ryssel, Volker Haublein
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages227-230
Number of pages4
ISBN (Electronic)9781538668283
DOIs
StatePublished - Sep 1 2018
Event22nd International Conference on Ion Implantation Technology, IIT 2018 - Wurzburg, Germany
Duration: Sep 16 2018Sep 21 2018

Publication series

NameProceedings of the International Conference on Ion Implantation Technology
Volume2018-September

Conference

Conference22nd International Conference on Ion Implantation Technology, IIT 2018
CountryGermany
CityWurzburg
Period9/16/189/21/18

Keywords

  • arsine
  • dopant gases
  • hazardous gas
  • ion implantation
  • ION-X
  • MOF
  • NuMat Technologies
  • phosphine
  • sub atmospheric gas source

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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  • Cite this

    Arnó, J., Farha, O. K., Morris, W., Siu, P. W., Tom, G. M., Weston, M. H., & Fuller, P. E. (2018). ION-X Dopant Gas Delivery System Performance Characterization at Axcelis. In H. Ryssel, & V. Haublein (Eds.), 2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings (pp. 227-230). [8807983] (Proceedings of the International Conference on Ion Implantation Technology; Vol. 2018-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIT.2018.8807983