INIS
surfaces
100%
interactions
100%
ions
100%
photons
100%
crystal growth
100%
vapors
100%
doped materials
50%
films
33%
deposition
33%
lasers
16%
molecules
16%
growth
16%
ion beams
16%
comparative evaluations
16%
sputtering
16%
alloys
16%
melting
16%
energy
16%
plasma
16%
kinetics
16%
probability
16%
molecular beam epitaxy
16%
irradiation
16%
chemical vapor deposition
16%
phase stability
16%
nucleation
16%
pyrolysis
16%
depth distribution
16%
laser-radiation heating
16%
Chemistry
Ion
100%
Crystal Growth
100%
Surface
100%
Doping Material
33%
Liquid Film
33%
Chemical Element
16%
Molecular Beam Epitaxy
16%
Nucleation
16%
Pyrolysis
16%
Ion Bombardment
16%
Photodissociation
16%
Phase Stability
16%
Deposition Technique
16%
Laser Heating
16%
Sputter Deposition
16%
Alloy
16%
Energy
16%
Molecule
16%
Chemical Kinetics Characteristics
16%
Irradiation
16%
Melting
16%
Material Science
Surface
100%
Vapor
100%
Crystal Growth
100%
Doping (Additives)
33%
Laser
33%
Alloy
16%
Film Deposition
16%
Plasma-Enhanced Chemical Vapor Deposition
16%
Sputter Deposition
16%
Molecular Beam Epitaxy
16%
Ion Implantation
16%
Irradiation
16%
Film Growth
16%