IP determination and 1+1 REMPI spectrum of SiO at 210–220 nm in an ion trap: Implications for SiO+ ion trap loading

Patrick R. Stollenwerk, Ivan O. Antonov, Brian C. Odom

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

The 1+1 REMPI spectrum of SiO in the 210–220 nm range was recorded. Observed bands were mostly assigned to the vibrational bands v=0-3,v=5-10 of the A-X electronic transition. Additionally, a band near 216–217 nm was tentatively assigned as a 2-photon transition from X to the n=12,13 [X2Σ+,v+=1] Rydberg states. Based on observed lines we estimated the IP of SiO to be 11.594(5) eV. The SiO+ cation has previously been identified as having a cycling transition useful for state control by optical pumping. Our work allowed us to identify an efficient method for loading an ion trap with rotationally and vibrationally cold SiO+ from an ablated sample of SiO by photoionizing through the (5,0) A-X band at 213.977 nm.

Original languageEnglish (US)
Pages (from-to)40-45
Number of pages6
JournalJournal of Molecular Spectroscopy
Volume355
DOIs
StatePublished - Jan 2019

Keywords

  • Cold molecules
  • Ion traps
  • Ionization potential
  • REMPI
  • SiO

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry

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