IP determination and 1+1 REMPI spectrum of SiO at 210–220 nm in an ion trap: Implications for SiO+ ion trap loading

Patrick R. Stollenwerk; Ivan O. Antonov; Brian C. Odom

doi:10.1016/j.jms.2018.11.008

IP determination and 1+1 REMPI spectrum of SiO at 210–220 nm in an ion trap: Implications for SiO⁺ ion trap loading

Patrick R. Stollenwerk, Ivan O. Antonov, Brian C. Odom

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The 1+1 REMPI spectrum of SiO in the 210–220 nm range was recorded. Observed bands were mostly assigned to the vibrational bands v^″=0-3,v^′=5-10 of the A-X electronic transition. Additionally, a band near 216–217 nm was tentatively assigned as a 2-photon transition from X to the n=12,13 [X²Σ⁺,v⁺=1] Rydberg states. Based on observed lines we estimated the IP of SiO to be 11.594(5) eV. The SiO⁺ cation has previously been identified as having a cycling transition useful for state control by optical pumping. Our work allowed us to identify an efficient method for loading an ion trap with rotationally and vibrationally cold SiO⁺ from an ablated sample of SiO by photoionizing through the (5,0) A-X band at 213.977 nm.

Original language	English (US)
Pages (from-to)	40-45
Number of pages	6
Journal	Journal of Molecular Spectroscopy
Volume	355
DOIs	https://doi.org/10.1016/j.jms.2018.11.008
State	Published - Jan 2019

Funding

We thank the Northwestern University Research Shop for their work machining parts of the apparatus used in this experiment. This work was supported by ARO Grant No. W911NF-14-0378 and ONR Grant No. N00014-17-1-2258. We thank the Northwestern University Research Shop for their work machining parts of the apparatus used in this experiment. This work was supported by ARO Grant No. W911NF-14-0378 and ONR Grant No. N00014-17-1-2258 .

Keywords

Cold molecules
Ion traps
Ionization potential
REMPI
SiO

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Spectroscopy
Physical and Theoretical Chemistry

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10.1016/j.jms.2018.11.008

Cite this

@article{8828b724e3b145b5bc574a4b966d9961,

title = "IP determination and 1+1 REMPI spectrum of SiO at 210–220 nm in an ion trap: Implications for SiO+ ion trap loading",

abstract = "The 1+1 REMPI spectrum of SiO in the 210–220 nm range was recorded. Observed bands were mostly assigned to the vibrational bands v″=0-3,v′=5-10 of the A-X electronic transition. Additionally, a band near 216–217 nm was tentatively assigned as a 2-photon transition from X to the n=12,13 [X2Σ+,v+=1] Rydberg states. Based on observed lines we estimated the IP of SiO to be 11.594(5) eV. The SiO+ cation has previously been identified as having a cycling transition useful for state control by optical pumping. Our work allowed us to identify an efficient method for loading an ion trap with rotationally and vibrationally cold SiO+ from an ablated sample of SiO by photoionizing through the (5,0) A-X band at 213.977 nm.",

keywords = "Cold molecules, Ion traps, Ionization potential, REMPI, SiO",

author = "Stollenwerk, {Patrick R.} and Antonov, {Ivan O.} and Odom, {Brian C.}",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier Inc.",

year = "2019",

month = jan,

doi = "10.1016/j.jms.2018.11.008",

language = "English (US)",

volume = "355",

pages = "40--45",

journal = "Journal of Molecular Spectroscopy",

issn = "0022-2852",

publisher = "Academic Press Inc.",

}

TY - JOUR

T1 - IP determination and 1+1 REMPI spectrum of SiO at 210–220 nm in an ion trap

T2 - Implications for SiO+ ion trap loading

AU - Stollenwerk, Patrick R.

AU - Antonov, Ivan O.

AU - Odom, Brian C.

PY - 2019/1

Y1 - 2019/1

N2 - The 1+1 REMPI spectrum of SiO in the 210–220 nm range was recorded. Observed bands were mostly assigned to the vibrational bands v″=0-3,v′=5-10 of the A-X electronic transition. Additionally, a band near 216–217 nm was tentatively assigned as a 2-photon transition from X to the n=12,13 [X2Σ+,v+=1] Rydberg states. Based on observed lines we estimated the IP of SiO to be 11.594(5) eV. The SiO+ cation has previously been identified as having a cycling transition useful for state control by optical pumping. Our work allowed us to identify an efficient method for loading an ion trap with rotationally and vibrationally cold SiO+ from an ablated sample of SiO by photoionizing through the (5,0) A-X band at 213.977 nm.

AB - The 1+1 REMPI spectrum of SiO in the 210–220 nm range was recorded. Observed bands were mostly assigned to the vibrational bands v″=0-3,v′=5-10 of the A-X electronic transition. Additionally, a band near 216–217 nm was tentatively assigned as a 2-photon transition from X to the n=12,13 [X2Σ+,v+=1] Rydberg states. Based on observed lines we estimated the IP of SiO to be 11.594(5) eV. The SiO+ cation has previously been identified as having a cycling transition useful for state control by optical pumping. Our work allowed us to identify an efficient method for loading an ion trap with rotationally and vibrationally cold SiO+ from an ablated sample of SiO by photoionizing through the (5,0) A-X band at 213.977 nm.

KW - Cold molecules

KW - Ion traps

KW - Ionization potential

KW - REMPI

KW - SiO

UR - http://www.scopus.com/inward/record.url?scp=85057784188&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85057784188&partnerID=8YFLogxK

U2 - 10.1016/j.jms.2018.11.008

DO - 10.1016/j.jms.2018.11.008

M3 - Article

AN - SCOPUS:85057784188

SN - 0022-2852

VL - 355

SP - 40

EP - 45

JO - Journal of Molecular Spectroscopy

JF - Journal of Molecular Spectroscopy

ER -

IP determination and 1+1 REMPI spectrum of SiO at 210–220 nm in an ion trap: Implications for SiO⁺ ion trap loading

Abstract

Funding

Keywords

ASJC Scopus subject areas

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Cite this

IP determination and 1+1 REMPI spectrum of SiO at 210–220 nm in an ion trap: Implications for SiO+ ion trap loading

Abstract

Funding

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this

IP determination and 1+1 REMPI spectrum of SiO at 210–220 nm in an ion trap: Implications for SiO⁺ ion trap loading