Isolated electron injection detectors with high gain and record low dark current at telecom wavelength

Vala Fathipour*, Omer Gokalp Memis, Sung Jun Jang, Robert L. Brown, Iman Hassani Nia, Hooman Mohseni

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

We report on recent performance breakthroughs in a novel short-wave infrared linear-mode electron-injection-based detector. Detectors consist of InP material system with a type-II band alignment and provide high internal avalanche-free amplification mechanism. Measurements on devices with 10-μm injector diameter and 30-μm absorber diameter show internal dark current density of about 0.1 nA/cm2 at 160 K. Compared with our previous reported results, dark current is reduced by two orders of magnitude with no sign of surface leakage limitation down to the lowest measured temperature. Compared with the best-reported linear-mode avalanche photodetector, which is based on HgCdTe, the electron-injection detector shows over three orders of magnitude lower internal dark current density at all measured temperatures. Using a detailed simulation with experimentally measured parameters, dark count rate of 1 Hz at 90% photon detection efficiency at 210 K is anticipated. This is a significantly higher operating temperature compared with superconducting detectors with a similar performance.

Original languageEnglish (US)
Article number6898806
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume20
Issue number6
DOIs
StatePublished - Nov 1 2014

Keywords

  • Infrared detectors
  • infrared image sensors
  • infrared imaging

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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