Kinetic mass diffusion analysis to predict failure mechanism of interconnect due to electromigration

Yao Yao*, Leon M Keer

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

With the reduction of size of electronic devices and solder interconnects, the current density is increasing rapidly and the electromigration effect becomes more critical to the interconnect failure. Traditional methods to determine the failure mechanism of interconnects are no longer sufficient under such high current densities. The electromigration effect upon failure mechanism of interconnect under high current density is discussed in this paper. A kinetic mass diffusion model is developed to predict void width and propagation speed near the interface between the intermetallic compound (IMC) and solder caused by eletromigration. 3D Finite element analysis has been implemented to analyze the current crowding effect around the void tip. The proposed kinetic model gives reasonable prediction for the void width and propagation velocity as compared with experimental results.

Original languageEnglish (US)
Title of host publicationMaterials Science and Technology Conference and Exhibition 2010, MS and T'10
Pages1000-1008
Number of pages9
StatePublished - Dec 1 2010
EventMaterials Science and Technology Conference and Exhibition 2010, MS and T'10 - Houston, TX, United States
Duration: Oct 17 2010Oct 21 2010

Publication series

NameMaterials Science and Technology Conference and Exhibition 2010, MS and T'10
Volume2

Other

OtherMaterials Science and Technology Conference and Exhibition 2010, MS and T'10
CountryUnited States
CityHouston, TX
Period10/17/1010/21/10

Keywords

  • Electromigration
  • Interface
  • Intermetallic
  • Mass diffusion
  • Solder
  • Void

ASJC Scopus subject areas

  • Materials Science (miscellaneous)

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