Kinetics of dopant incorporation using a low-energy antimony ion beam during growth of Si(100) films by molecular-beam epitaxy

n-type Si(100) films have been grown by molecular-beam epitaxy utilizing low-energy Sb ion-beam doping. The kinetics of dopant incorporation were investigated as a function of acceleration potential &=50400 V), deposition temperature (Ts=5501050°C), and Si growth rate (RSi=0.050.8 nm s-1). The & using accelerated-ion doping was up to 5 orders of magnitude higher than was & was & 300 V at Tso850°C. At lower acceleration potentials, & was temperature and deposition-rate dependent. &=50 V and & was still more than 1 order of magnitude higher than for thermal doping. Moreover, surface-segregation-induced profile broadening Sb, which for thermal-beam doping was 80 nm per concentration decade for Tso650°C, was less than the depth resolution of the measurement, i.e., Sbo12 nm per concentration decade. The experimental incorporation results, &,Ts,RSi), were found to be well described using a multisite model (including surface, bulk, and three intermediate sites) in which dopant surface segregation, incorporation, and bulk diffusion are accounted for by solving simultaneous transition-rate equations.