Kinetics of photoconductivity in n-type GaN photodetector

P. Kung*, X. Zhang, D. Walker, A. Saxler, J. Piotrowski, A. Rogalski, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

92 Scopus citations


High-quality ultraviolet photoconductive detectors have been fabricated using GaN layers grown by low-pressure metalorganic chemical vapor deposition on (110) sapphire substrates. The spectral responsivity remained nearly constant for wavelengths from 200 to 365 nm and dropped sharply by almost three orders of magnitude for wavelengths longer than 365 nm. The kinetics of the photoconductivity have been studied by the measurements of the frequency-dependent photoresponse and photoconductivity decay. Strongly sublinear response and excitation-dependent response time have been observed even at relatively low excitation levels. This can be attributed to redistribution of the charge carriers with increased excitation level.

Original languageEnglish (US)
Pages (from-to)3792
Number of pages1
JournalApplied Physics Letters
StatePublished - 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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