Kinetics of quantum states in quantum cascade lasers: Device design principles and fabrication

Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Quantum cascade lasers are based on radiative transition between quasi-bound states formed by superlattices in the presence of high electric field. In order to understand the device principle so that we can explain and predict which structures perform better, it is necessary to develop a microscopic model for carrier and current distribution among these quasi-bound states. A mathematical model and simulation results for the kinetics of these quantum states in quantum cascade lasers are presented in comparison with our experimental results. The role of the ratio between inter- and intrasubband scattering rates, and the presence of non-equilibrium phonons are identified with explicit calculation. Our preliminary experimental results and calculation show that the lasers can have very high T0 up to 210 K and very low threshold current density of Jth = 3.4 kA/cm2 at 300 K with the current design. However, it is emphasized that in order to further improve the device performance at high temperature, it is very important to devise a structure that can dissipate the generated phonons much more efficiently.

Original languageEnglish (US)
Pages (from-to)1019-1029
Number of pages11
JournalMicroelectronics Journal
Volume30
Issue number10
DOIs
StatePublished - Jan 1 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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