Lamellar structure and twist boundary of NaV2O5 grown by flux method

Y. G. Wang; H. Y. Wu; V. P. Dravid

doi:10.1007/s10853-005-0675-y

Lamellar structure and twist boundary of NaV₂O₅ grown by flux method

Y. G. Wang^*, H. Y. Wu, V. P. Dravid

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Microstructures of NaV₂O₅ prepared using flux method were characterized. These structures were observed to be dominated by lamellae with an average thickness of ∼1 micron. These lamellae share (001) plane and stack along [001] direction. A small orientation difference among these lamellae was detected with electron diffraction to be within several degrees. A pure twist boundary with (001) plane as the boundary interface and high sigma value of 235 was determined. Within the lamellae there are numerous dislocations arranged parallel to the twist boundary. The twist boundaries and dislocations may introduce distortion in the layers of VO₅ pyramids, which is believed to be unfavorable for Na atoms to position between these layers and may result in non-stoichiometry locally at the boundary.

Original language	English (US)
Pages (from-to)	1725-1729
Number of pages	5
Journal	Journal of Materials Science
Volume	40
Issue number	7
DOIs	https://doi.org/10.1007/s10853-005-0675-y
State	Published - Apr 2005

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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title = "Lamellar structure and twist boundary of NaV2O5 grown by flux method",

abstract = "Microstructures of NaV2O5 prepared using flux method were characterized. These structures were observed to be dominated by lamellae with an average thickness of ∼1 micron. These lamellae share (001) plane and stack along [001] direction. A small orientation difference among these lamellae was detected with electron diffraction to be within several degrees. A pure twist boundary with (001) plane as the boundary interface and high sigma value of 235 was determined. Within the lamellae there are numerous dislocations arranged parallel to the twist boundary. The twist boundaries and dislocations may introduce distortion in the layers of VO5 pyramids, which is believed to be unfavorable for Na atoms to position between these layers and may result in non-stoichiometry locally at the boundary.",

author = "Wang, {Y. G.} and Wu, {H. Y.} and Dravid, {V. P.}",

note = "Funding Information: This work was supported by National Nature Sciences Foundation of China under the NNSFC grant 60271028.",

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doi = "10.1007/s10853-005-0675-y",

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T1 - Lamellar structure and twist boundary of NaV2O5 grown by flux method

AU - Wang, Y. G.

AU - Wu, H. Y.

AU - Dravid, V. P.

N1 - Funding Information: This work was supported by National Nature Sciences Foundation of China under the NNSFC grant 60271028.

PY - 2005/4

Y1 - 2005/4

N2 - Microstructures of NaV2O5 prepared using flux method were characterized. These structures were observed to be dominated by lamellae with an average thickness of ∼1 micron. These lamellae share (001) plane and stack along [001] direction. A small orientation difference among these lamellae was detected with electron diffraction to be within several degrees. A pure twist boundary with (001) plane as the boundary interface and high sigma value of 235 was determined. Within the lamellae there are numerous dislocations arranged parallel to the twist boundary. The twist boundaries and dislocations may introduce distortion in the layers of VO5 pyramids, which is believed to be unfavorable for Na atoms to position between these layers and may result in non-stoichiometry locally at the boundary.

AB - Microstructures of NaV2O5 prepared using flux method were characterized. These structures were observed to be dominated by lamellae with an average thickness of ∼1 micron. These lamellae share (001) plane and stack along [001] direction. A small orientation difference among these lamellae was detected with electron diffraction to be within several degrees. A pure twist boundary with (001) plane as the boundary interface and high sigma value of 235 was determined. Within the lamellae there are numerous dislocations arranged parallel to the twist boundary. The twist boundaries and dislocations may introduce distortion in the layers of VO5 pyramids, which is believed to be unfavorable for Na atoms to position between these layers and may result in non-stoichiometry locally at the boundary.

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Lamellar structure and twist boundary of NaV₂O₅ grown by flux method

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