Large enhancement of spontaneous emission rates of InAs quantum dots in GaAs microdisks

W. Fang; J. Y. Xu; A. Yamilov; H. Cao; Y. Ma; S. T. Ho; G. S. Solomon

doi:10.1364/OL.27.000948

Large enhancement of spontaneous emission rates of InAs quantum dots in GaAs microdisks

W. Fang^*, J. Y. Xu, A. Yamilov, H. Cao, Y. Ma, S. T. Ho, G. S. Solomon

^*Corresponding author for this work

Electrical and Computer Engineering

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35 Scopus citations

Abstract

We have studied the enhancement of spontaneous emission rates for InAs quantum dots embedded in GaAs microdisks in a time-resolved photoluminescence experiment. Inhomogeneous broadening of the quantum dot energy levels and random spatial distribution of the quantum dots in a microdisk lead to a broad distribution of the spontaneous emission rates. Using a nonnegative least-norm algorithm, we extract the distribution of spontaneous emission rates from the temporal decay of emission intensity. The maximum spontaneous emission enhancement factor exceeds 10.

Original language	English (US)
Pages (from-to)	948-950
Number of pages	3
Journal	Optics Letters
Volume	27
Issue number	11
DOIs	https://doi.org/10.1364/OL.27.000948
State	Published - Jun 1 2002

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1364/OL.27.000948

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abstract = "We have studied the enhancement of spontaneous emission rates for InAs quantum dots embedded in GaAs microdisks in a time-resolved photoluminescence experiment. Inhomogeneous broadening of the quantum dot energy levels and random spatial distribution of the quantum dots in a microdisk lead to a broad distribution of the spontaneous emission rates. Using a nonnegative least-norm algorithm, we extract the distribution of spontaneous emission rates from the temporal decay of emission intensity. The maximum spontaneous emission enhancement factor exceeds 10.",

author = "W. Fang and Xu, {J. Y.} and A. Yamilov and H. Cao and Y. Ma and Ho, {S. T.} and Solomon, {G. S.}",

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T1 - Large enhancement of spontaneous emission rates of InAs quantum dots in GaAs microdisks

AU - Fang, W.

AU - Xu, J. Y.

AU - Yamilov, A.

AU - Cao, H.

AU - Ma, Y.

AU - Ho, S. T.

AU - Solomon, G. S.

PY - 2002/6/1

Y1 - 2002/6/1

N2 - We have studied the enhancement of spontaneous emission rates for InAs quantum dots embedded in GaAs microdisks in a time-resolved photoluminescence experiment. Inhomogeneous broadening of the quantum dot energy levels and random spatial distribution of the quantum dots in a microdisk lead to a broad distribution of the spontaneous emission rates. Using a nonnegative least-norm algorithm, we extract the distribution of spontaneous emission rates from the temporal decay of emission intensity. The maximum spontaneous emission enhancement factor exceeds 10.

AB - We have studied the enhancement of spontaneous emission rates for InAs quantum dots embedded in GaAs microdisks in a time-resolved photoluminescence experiment. Inhomogeneous broadening of the quantum dot energy levels and random spatial distribution of the quantum dots in a microdisk lead to a broad distribution of the spontaneous emission rates. Using a nonnegative least-norm algorithm, we extract the distribution of spontaneous emission rates from the temporal decay of emission intensity. The maximum spontaneous emission enhancement factor exceeds 10.

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JO - Optics Letters

JF - Optics Letters

IS - 11

ER -

Large enhancement of spontaneous emission rates of InAs quantum dots in GaAs microdisks

Abstract

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