Large enhancement of spontaneous emission rates of InAs quantum dots in GaAs microdisks

W. Fang*, J. Y. Xu, A. Yamilov, H. Cao, Y. Ma, S. T. Ho, G. S. Solomon

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

We have studied the enhancement of spontaneous emission rates for InAs quantum dots embedded in GaAs microdisks in a time-resolved photoluminescence experiment. Inhomogeneous broadening of the quantum dot energy levels and random spatial distribution of the quantum dots in a microdisk lead to a broad distribution of the spontaneous emission rates. Using a nonnegative least-norm algorithm, we extract the distribution of spontaneous emission rates from the temporal decay of emission intensity. The maximum spontaneous emission enhancement factor exceeds 10.

Original languageEnglish (US)
Pages (from-to)948-950
Number of pages3
JournalOptics Letters
Volume27
Issue number11
DOIs
StatePublished - Jun 1 2002

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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