Large enhancement of spontaneous emission rates of InAs quantum dots in GaAs microdisks

H. Cao; W. Fang; J. Y. Xu; A. Yamilov; Y. Ma; S. T. Ho; G. S. Solomon

Large enhancement of spontaneous emission rates of InAs quantum dots in GaAs microdisks

H. Cao^*, W. Fang, J. Y. Xu, A. Yamilov, Y. Ma, S. T. Ho, G. S. Solomon

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

Compared to the average enhancement factor, a more accurate way of describing the spontaneous emission enhancement is to introduce a distribution function P(γ) for the spontaneous emission rates γ. For some quantum dots (QDs), the spontaneous emission rates exceed 20 GHz. The corresponding decay time is less than 50 ps. Hence, the spontaneous emission enhancement factor for some QDs exceed 10.

Original language	English (US)
Pages	56
Number of pages	1
State	Published - 2002
Event	Quantum Electronics and Laser Science (QELS) 2002 - Long Beach, CA, United States Duration: May 19 2002 → May 24 2002

Other

Other	Quantum Electronics and Laser Science (QELS) 2002
Country/Territory	United States
City	Long Beach, CA
Period	5/19/02 → 5/24/02

ASJC Scopus subject areas

General Physics and Astronomy

Cite this

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title = "Large enhancement of spontaneous emission rates of InAs quantum dots in GaAs microdisks",

abstract = "Compared to the average enhancement factor, a more accurate way of describing the spontaneous emission enhancement is to introduce a distribution function P(γ) for the spontaneous emission rates γ. For some quantum dots (QDs), the spontaneous emission rates exceed 20 GHz. The corresponding decay time is less than 50 ps. Hence, the spontaneous emission enhancement factor for some QDs exceed 10.",

author = "H. Cao and W. Fang and Xu, {J. Y.} and A. Yamilov and Y. Ma and Ho, {S. T.} and Solomon, {G. S.}",

year = "2002",

language = "English (US)",

pages = "56",

note = "Quantum Electronics and Laser Science (QELS) 2002 ; Conference date: 19-05-2002 Through 24-05-2002",

}

TY - CONF

T1 - Large enhancement of spontaneous emission rates of InAs quantum dots in GaAs microdisks

AU - Cao, H.

AU - Fang, W.

AU - Xu, J. Y.

AU - Yamilov, A.

AU - Ma, Y.

AU - Ho, S. T.

AU - Solomon, G. S.

PY - 2002

Y1 - 2002

N2 - Compared to the average enhancement factor, a more accurate way of describing the spontaneous emission enhancement is to introduce a distribution function P(γ) for the spontaneous emission rates γ. For some quantum dots (QDs), the spontaneous emission rates exceed 20 GHz. The corresponding decay time is less than 50 ps. Hence, the spontaneous emission enhancement factor for some QDs exceed 10.

AB - Compared to the average enhancement factor, a more accurate way of describing the spontaneous emission enhancement is to introduce a distribution function P(γ) for the spontaneous emission rates γ. For some quantum dots (QDs), the spontaneous emission rates exceed 20 GHz. The corresponding decay time is less than 50 ps. Hence, the spontaneous emission enhancement factor for some QDs exceed 10.

UR - http://www.scopus.com/inward/record.url?scp=0036373460&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036373460&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0036373460

SP - 56

T2 - Quantum Electronics and Laser Science (QELS) 2002

Y2 - 19 May 2002 through 24 May 2002

ER -

Large enhancement of spontaneous emission rates of InAs quantum dots in GaAs microdisks

Abstract

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ASJC Scopus subject areas

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