Large enhancement of spontaneous emission rates of InAs quantum dots in GaAs microdisks

H. Cao*, W. Fang, J. Y. Xu, A. Yamilov, Y. Ma, S. T. Ho, G. S. Solomon

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

Compared to the average enhancement factor, a more accurate way of describing the spontaneous emission enhancement is to introduce a distribution function P(γ) for the spontaneous emission rates γ. For some quantum dots (QDs), the spontaneous emission rates exceed 20 GHz. The corresponding decay time is less than 50 ps. Hence, the spontaneous emission enhancement factor for some QDs exceed 10.

Original languageEnglish (US)
Number of pages1
StatePublished - Jan 1 2002
EventQuantum Electronics and Laser Science (QELS) 2002 - Long Beach, CA, United States
Duration: May 19 2002May 24 2002

Other

OtherQuantum Electronics and Laser Science (QELS) 2002
CountryUnited States
CityLong Beach, CA
Period5/19/025/24/02

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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