Abstract
The magnetoresistance (MR) in post-annealed polycrystalline and epitaxial Bi thin films was discussed. The ring reflection high-energy electron diffraction (RHEED) patterns were shown by the films on Si(100). The results showed an increase in the MR by a factor of 2560 at 5K as compared with 343 for an as-grown epitaxial film was observed due to enhanced carrier mobilities.
Original language | English (US) |
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Pages (from-to) | 201-203 |
Number of pages | 3 |
Journal | Journal of Magnetism and Magnetic Materials |
Volume | 239 |
Issue number | 1-3 |
DOIs | |
State | Published - Feb 2002 |
Keywords
- Bismuth
- Magnetoresistance
- Thin films
- Transport
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics