Large magnetoresistance in post-annealed polycrystalline and epitaxial Bi thin films

Sunglae Cho*, Yunki Kim, L. J. Olafsen, I. Vurgaftman, A. J. Freeman, G. K.L. Wong, J. R. Meyer, C. A. Hoffman, J. B. Ketterson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

The magnetoresistance (MR) in post-annealed polycrystalline and epitaxial Bi thin films was discussed. The ring reflection high-energy electron diffraction (RHEED) patterns were shown by the films on Si(100). The results showed an increase in the MR by a factor of 2560 at 5K as compared with 343 for an as-grown epitaxial film was observed due to enhanced carrier mobilities.

Original languageEnglish (US)
Pages (from-to)201-203
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume239
Issue number1-3
DOIs
StatePublished - Feb 2002

Keywords

  • Bismuth
  • Magnetoresistance
  • Thin films
  • Transport

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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