Large magnetoresistance in post-annealed polycrystalline and epitaxial Bi thin films

Sunglae Cho; Yunki Kim; L. J. Olafsen; I. Vurgaftman; A. J. Freeman; G. K.L. Wong; J. R. Meyer; C. A. Hoffman; J. B. Ketterson

doi:10.1016/S0304-8853(01)00557-1

Large magnetoresistance in post-annealed polycrystalline and epitaxial Bi thin films

Sunglae Cho^*, Yunki Kim, L. J. Olafsen, I. Vurgaftman, A. J. Freeman, G. K.L. Wong, J. R. Meyer, C. A. Hoffman, J. B. Ketterson

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The magnetoresistance (MR) in post-annealed polycrystalline and epitaxial Bi thin films was discussed. The ring reflection high-energy electron diffraction (RHEED) patterns were shown by the films on Si(100). The results showed an increase in the MR by a factor of 2560 at 5K as compared with 343 for an as-grown epitaxial film was observed due to enhanced carrier mobilities.

Original language	English (US)
Pages (from-to)	201-203
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	239
Issue number	1-3
DOIs	https://doi.org/10.1016/S0304-8853(01)00557-1
State	Published - Feb 2002

Keywords

Bismuth
Magnetoresistance
Thin films
Transport

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/S0304-8853(01)00557-1

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title = "Large magnetoresistance in post-annealed polycrystalline and epitaxial Bi thin films",

abstract = "The magnetoresistance (MR) in post-annealed polycrystalline and epitaxial Bi thin films was discussed. The ring reflection high-energy electron diffraction (RHEED) patterns were shown by the films on Si(100). The results showed an increase in the MR by a factor of 2560 at 5K as compared with 343 for an as-grown epitaxial film was observed due to enhanced carrier mobilities.",

keywords = "Bismuth, Magnetoresistance, Thin films, Transport",

author = "Sunglae Cho and Yunki Kim and Olafsen, {L. J.} and I. Vurgaftman and Freeman, {A. J.} and Wong, {G. K.L.} and Meyer, {J. R.} and Hoffman, {C. A.} and Ketterson, {J. B.}",

note = "Funding Information: This work was supported by DARPA under Grant No. DAAG55-97-1-0130 and by the University of Ulsan Research Fund of the Year 2000. Central facilities supported by the National Science Foundation, at the Materials Research Center of Northwestern University, under Award No. DMR-9120521 were also made use of.",

year = "2002",

month = feb,

doi = "10.1016/S0304-8853(01)00557-1",

language = "English (US)",

volume = "239",

pages = "201--203",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "1-3",

}

Large magnetoresistance in post-annealed polycrystalline and epitaxial Bi thin films. / Cho, Sunglae; Kim, Yunki; Olafsen, L. J.; Vurgaftman, I.; Freeman, A. J.; Wong, G. K.L.; Meyer, J. R.; Hoffman, C. A.; Ketterson, J. B.

In: Journal of Magnetism and Magnetic Materials, Vol. 239, No. 1-3, 02.2002, p. 201-203.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Large magnetoresistance in post-annealed polycrystalline and epitaxial Bi thin films

AU - Cho, Sunglae

AU - Kim, Yunki

AU - Olafsen, L. J.

AU - Vurgaftman, I.

AU - Freeman, A. J.

AU - Wong, G. K.L.

AU - Meyer, J. R.

AU - Hoffman, C. A.

AU - Ketterson, J. B.

N1 - Funding Information: This work was supported by DARPA under Grant No. DAAG55-97-1-0130 and by the University of Ulsan Research Fund of the Year 2000. Central facilities supported by the National Science Foundation, at the Materials Research Center of Northwestern University, under Award No. DMR-9120521 were also made use of.

PY - 2002/2

Y1 - 2002/2

N2 - The magnetoresistance (MR) in post-annealed polycrystalline and epitaxial Bi thin films was discussed. The ring reflection high-energy electron diffraction (RHEED) patterns were shown by the films on Si(100). The results showed an increase in the MR by a factor of 2560 at 5K as compared with 343 for an as-grown epitaxial film was observed due to enhanced carrier mobilities.

AB - The magnetoresistance (MR) in post-annealed polycrystalline and epitaxial Bi thin films was discussed. The ring reflection high-energy electron diffraction (RHEED) patterns were shown by the films on Si(100). The results showed an increase in the MR by a factor of 2560 at 5K as compared with 343 for an as-grown epitaxial film was observed due to enhanced carrier mobilities.

KW - Bismuth

KW - Magnetoresistance

KW - Thin films

KW - Transport

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UR - http://www.scopus.com/inward/citedby.url?scp=0036466054&partnerID=8YFLogxK

U2 - 10.1016/S0304-8853(01)00557-1

DO - 10.1016/S0304-8853(01)00557-1

M3 - Article

AN - SCOPUS:0036466054

VL - 239

SP - 201

EP - 203

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

IS - 1-3

ER -

Large magnetoresistance in post-annealed polycrystalline and epitaxial Bi thin films

Abstract

Keywords

ASJC Scopus subject areas

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