Abstract
We have observed a large increase in the magnetoresistance (MR) of molecular beam epitaxy grown Bi thin films, which were subjected to a postannealing procedure 3°C below the Bi melting point. We have achieved an increase in the MR by a factor of 2560 at helium temperatures compared with of 343 for an as-grown film. The enhancement of the MR in the annealed films is due to higher electron and hole mobilities (μe ≈ 1 X 106 cm2/V s at 5 K) relative to those of the as-grown films (μe ≈ 9 X 104 cm2/V s at 5 K). The enhancement of the mobility in the annealed films is also supported by the observation of Shubnikov-de Haas oscillations.
Original language | English (US) |
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Pages (from-to) | 3651-3653 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 79 |
Issue number | 22 |
DOIs | |
State | Published - Nov 26 2001 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)