Large magnetoresistance in postannealed Bi thin films

Sunglae Cho; Yunki Kim; A. J. Freeman; G. K.L. Wong; J. B. Ketterson; L. J. Olafsen; I. Vurgaftman; J. R. Meyer; C. A. Hoffman

doi:10.1063/1.1416157

Large magnetoresistance in postannealed Bi thin films

Sunglae Cho^*, Yunki Kim, A. J. Freeman, G. K.L. Wong, J. B. Ketterson, L. J. Olafsen, I. Vurgaftman, J. R. Meyer, C. A. Hoffman

^*Corresponding author for this work

Physics and Astronomy

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Abstract

We have observed a large increase in the magnetoresistance (MR) of molecular beam epitaxy grown Bi thin films, which were subjected to a postannealing procedure 3°C below the Bi melting point. We have achieved an increase in the MR by a factor of 2560 at helium temperatures compared with of 343 for an as-grown film. The enhancement of the MR in the annealed films is due to higher electron and hole mobilities (μ_e ≈ 1 X 10⁶ cm²/V s at 5 K) relative to those of the as-grown films (μ_e ≈ 9 X 10⁴ cm²/V s at 5 K). The enhancement of the mobility in the annealed films is also supported by the observation of Shubnikov-de Haas oscillations.

Original language	English (US)
Pages (from-to)	3651-3653
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	22
DOIs	https://doi.org/10.1063/1.1416157
State	Published - Nov 26 2001

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Large magnetoresistance in postannealed Bi thin films",

abstract = "We have observed a large increase in the magnetoresistance (MR) of molecular beam epitaxy grown Bi thin films, which were subjected to a postannealing procedure 3°C below the Bi melting point. We have achieved an increase in the MR by a factor of 2560 at helium temperatures compared with of 343 for an as-grown film. The enhancement of the MR in the annealed films is due to higher electron and hole mobilities (μe ≈ 1 X 106 cm2/V s at 5 K) relative to those of the as-grown films (μe ≈ 9 X 104 cm2/V s at 5 K). The enhancement of the mobility in the annealed films is also supported by the observation of Shubnikov-de Haas oscillations.",

author = "Sunglae Cho and Yunki Kim and Freeman, {A. J.} and Wong, {G. K.L.} and Ketterson, {J. B.} and Olafsen, {L. J.} and I. Vurgaftman and Meyer, {J. R.} and Hoffman, {C. A.}",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - Large magnetoresistance in postannealed Bi thin films

AU - Cho, Sunglae

AU - Kim, Yunki

AU - Freeman, A. J.

AU - Wong, G. K.L.

AU - Ketterson, J. B.

AU - Olafsen, L. J.

AU - Vurgaftman, I.

AU - Meyer, J. R.

AU - Hoffman, C. A.

PY - 2001/11/26

Y1 - 2001/11/26

N2 - We have observed a large increase in the magnetoresistance (MR) of molecular beam epitaxy grown Bi thin films, which were subjected to a postannealing procedure 3°C below the Bi melting point. We have achieved an increase in the MR by a factor of 2560 at helium temperatures compared with of 343 for an as-grown film. The enhancement of the MR in the annealed films is due to higher electron and hole mobilities (μe ≈ 1 X 106 cm2/V s at 5 K) relative to those of the as-grown films (μe ≈ 9 X 104 cm2/V s at 5 K). The enhancement of the mobility in the annealed films is also supported by the observation of Shubnikov-de Haas oscillations.

AB - We have observed a large increase in the magnetoresistance (MR) of molecular beam epitaxy grown Bi thin films, which were subjected to a postannealing procedure 3°C below the Bi melting point. We have achieved an increase in the MR by a factor of 2560 at helium temperatures compared with of 343 for an as-grown film. The enhancement of the MR in the annealed films is due to higher electron and hole mobilities (μe ≈ 1 X 106 cm2/V s at 5 K) relative to those of the as-grown films (μe ≈ 9 X 104 cm2/V s at 5 K). The enhancement of the mobility in the annealed films is also supported by the observation of Shubnikov-de Haas oscillations.

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Large magnetoresistance in postannealed Bi thin films

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