Laser assisted field induced oxide nanopatterning of hydrogen passivated silicon surfaces

L. S.C. Pingree*, M. J. Schmitz, D. E. Kramer, M. C. Hersam

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Field induced oxide (FIO) nanopatterning of hydrogen passivated silicon surfaces with an atomic force microscope (AFM) has been controlled by laser irradiation. Specifically, local oxidation on H:Si(111) surfaces can be fully suppressed or activated by toggling a laser that is illuminating a lightly doped silicon AFM cantilever. The nanopatterning mechanism is attributed to the control of the free carrier concentration in the AFM probe by the laser. When the laser is toggled off, charge injection is terminated, thus eliminating the electrochemical reactions required for oxide formation. Laser assisted FIO provides an alternative and flexible means for controlling oxide nanopatterning.

Original languageEnglish (US)
Article number073110
JournalApplied Physics Letters
Volume91
Issue number7
DOIs
StatePublished - 2007
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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