In virtue of mode tunability and inherent optical feedback, the lasing of semiconductor optical cavity has become the research focus of optoelectronic devices integrated on chip and optical systems to explore the strong light-matter coupling. In this work, the lasing behavior of a single ZnO nanowire is investigated under pressure with a diamond anvil cell (DAC). The stimulated emission blueshifts faster than the spontaneous emission with pressure increasing, which is confirmed by the color difference between the middle and the ends of ZnO nanowire. The pressure-dependent lasing performance of ZnO nanowire is evaluated by the characteristic pressure, 17.88 GPa, extracted from an exponential dependence of lasing threshold on the pressure. The lasing behavior of ZnO nanowire owns low reversibility under a moderate pressure while no pressure-induced phase transition happens. All these results provide us a perspective to optimize the lasing performance of optoelectronic devices and explore the strong light-matter coupling within semiconductor optical cavities.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films