Layer-by-Layer Assembled 2D Montmorillonite Dielectrics for Solution-Processed Electronics

Jian Zhu; Xiaolong Liu; Michael L. Geier; Julian J. McMorrow; Deep Jariwala; Megan E. Beck; Wei Huang; Tobin J. Marks; Mark C. Hersam

doi:10.1002/adma.201504501

Layer-by-Layer Assembled 2D Montmorillonite Dielectrics for Solution-Processed Electronics

Jian Zhu, Xiaolong Liu, Michael L. Geier, Julian J. McMorrow, Deep Jariwala, Megan E. Beck, Wei Huang, Tobin J. Marks, Mark C. Hersam^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

71 Scopus citations

Abstract

Layer-by-layer assembled 2D montmorillonite nanosheets are shown to be high-performance, solution-processed dielectrics. These scalable and spatially uniform sub-10 nm thick dielectrics yield high areal capacitances of ≈600 nF cm^-2 and low leakage currents down to 6 × 10^-9A cm^-2 that enable low voltage operation of p-type semiconducting single-walled carbon nanotube and n-type indium gallium zinc oxide field-effect transistors.

Original language	English (US)
Pages (from-to)	63-68
Number of pages	6
Journal	Advanced Materials
Volume	28
Issue number	1
DOIs	https://doi.org/10.1002/adma.201504501
State	Published - Jan 6 2016

Keywords

2D dielectrics
LBL assembly
capacitors
nanosheets
transistors

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
General Materials Science

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10.1002/adma.201504501

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@article{60756ae14d2742768b8d473ad56f684e,

title = "Layer-by-Layer Assembled 2D Montmorillonite Dielectrics for Solution-Processed Electronics",

abstract = "Layer-by-layer assembled 2D montmorillonite nanosheets are shown to be high-performance, solution-processed dielectrics. These scalable and spatially uniform sub-10 nm thick dielectrics yield high areal capacitances of ≈600 nF cm-2 and low leakage currents down to 6 × 10-9A cm-2 that enable low voltage operation of p-type semiconducting single-walled carbon nanotube and n-type indium gallium zinc oxide field-effect transistors.",

keywords = "2D dielectrics, LBL assembly, capacitors, nanosheets, transistors",

author = "Jian Zhu and Xiaolong Liu and Geier, {Michael L.} and McMorrow, {Julian J.} and Deep Jariwala and Beck, {Megan E.} and Wei Huang and Marks, {Tobin J.} and Hersam, {Mark C.}",

note = "Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

year = "2016",

month = jan,

day = "6",

doi = "10.1002/adma.201504501",

language = "English (US)",

volume = "28",

pages = "63--68",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "1",

}

TY - JOUR

T1 - Layer-by-Layer Assembled 2D Montmorillonite Dielectrics for Solution-Processed Electronics

AU - Zhu, Jian

AU - Liu, Xiaolong

AU - Geier, Michael L.

AU - McMorrow, Julian J.

AU - Jariwala, Deep

AU - Beck, Megan E.

AU - Huang, Wei

AU - Marks, Tobin J.

AU - Hersam, Mark C.

PY - 2016/1/6

Y1 - 2016/1/6

N2 - Layer-by-layer assembled 2D montmorillonite nanosheets are shown to be high-performance, solution-processed dielectrics. These scalable and spatially uniform sub-10 nm thick dielectrics yield high areal capacitances of ≈600 nF cm-2 and low leakage currents down to 6 × 10-9A cm-2 that enable low voltage operation of p-type semiconducting single-walled carbon nanotube and n-type indium gallium zinc oxide field-effect transistors.

AB - Layer-by-layer assembled 2D montmorillonite nanosheets are shown to be high-performance, solution-processed dielectrics. These scalable and spatially uniform sub-10 nm thick dielectrics yield high areal capacitances of ≈600 nF cm-2 and low leakage currents down to 6 × 10-9A cm-2 that enable low voltage operation of p-type semiconducting single-walled carbon nanotube and n-type indium gallium zinc oxide field-effect transistors.

KW - 2D dielectrics

KW - LBL assembly

KW - capacitors

KW - nanosheets

KW - transistors

UR - http://www.scopus.com/inward/record.url?scp=84955254531&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84955254531&partnerID=8YFLogxK

U2 - 10.1002/adma.201504501

DO - 10.1002/adma.201504501

M3 - Article

C2 - 26514248

AN - SCOPUS:84955254531

SN - 0935-9648

VL - 28

SP - 63

EP - 68

JO - Advanced Materials

JF - Advanced Materials

IS - 1

ER -

Layer-by-Layer Assembled 2D Montmorillonite Dielectrics for Solution-Processed Electronics

Abstract

Keywords

ASJC Scopus subject areas

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