Layer-by-Layer Assembled 2D Montmorillonite Dielectrics for Solution-Processed Electronics

Jian Zhu; Xiaolong Liu; Michael L. Geier; Julian J. McMorrow; Deep Jariwala; Megan E. Beck; Wei Huang; Tobin J. Marks; Mark C. Hersam

doi:10.1002/adma.201504501

Layer-by-Layer Assembled 2D Montmorillonite Dielectrics for Solution-Processed Electronics

Jian Zhu, Xiaolong Liu, Michael L. Geier, Julian J. McMorrow, Deep Jariwala, Megan E. Beck, Wei Huang, Tobin J. Marks, Mark C. Hersam^*

^*Corresponding author for this work

Research output: Contribution to journal › Article

29 Scopus citations

Abstract

Layer-by-layer assembled 2D montmorillonite nanosheets are shown to be high-performance, solution-processed dielectrics. These scalable and spatially uniform sub-10 nm thick dielectrics yield high areal capacitances of ≈600 nF cm^-2 and low leakage currents down to 6 × 10^-9A cm^-2 that enable low voltage operation of p-type semiconducting single-walled carbon nanotube and n-type indium gallium zinc oxide field-effect transistors.

Original language	English (US)
Pages (from-to)	63-68
Number of pages	6
Journal	Advanced Materials
Volume	28
Issue number	1
DOIs	https://doi.org/10.1002/adma.201504501
State	Published - Jan 6 2016

Keywords

2D dielectrics
LBL assembly
capacitors
nanosheets
transistors

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201504501

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Zhu, J., Liu, X., Geier, M. L., McMorrow, J. J., Jariwala, D., Beck, M. E., Huang, W., Marks, T. J., & Hersam, M. C. (2016). Layer-by-Layer Assembled 2D Montmorillonite Dielectrics for Solution-Processed Electronics. Advanced Materials, 28(1), 63-68. https://doi.org/10.1002/adma.201504501

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abstract = "Layer-by-layer assembled 2D montmorillonite nanosheets are shown to be high-performance, solution-processed dielectrics. These scalable and spatially uniform sub-10 nm thick dielectrics yield high areal capacitances of ≈600 nF cm-2 and low leakage currents down to 6 × 10-9A cm-2 that enable low voltage operation of p-type semiconducting single-walled carbon nanotube and n-type indium gallium zinc oxide field-effect transistors.",

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AU - Huang, Wei

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