Layer composition and mode structure analysis of heterojunction laser diodes by near field scanning optical microscopy

M. S. Unlu*, B. B. Goldberg, W. D. Herzog, H. F. Ghaemi, E. Towe

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The mode structure and layer composition analysis of high power strained (In,Ga)As using the super-resolution capabilities of near field scanning optical microscopy (NSOM) are reported. The lasers are designed to pump Erbium doped fiber amplifiers in a configuration optimized for a single transverse laser mode. At high current levels, coupling efficiency decreases due to broadening of the spot size and the onset of multiple transverse modes. Sub-micron collection mode imaging and spectroscopic mapping of the emission mode structure as a function of laser pulse length and current easily identify a regime of operation where multiple transverse modes are observed. The evolution of multiple transverse modes coincides with a kink observed in the L-I curve. Near field microscopy enables the mode profile and spectral image to be manage correlated with the layer structure of the device with 100 nm resolution.

Original languageEnglish (US)
Title of host publicationAnnual Device Research Conference Digest
PublisherIEEE
Pages148-149
Number of pages2
StatePublished - Dec 1 1995
EventProceedings of the 1995 53rd Annual Device Research Conference Digest - Charlottesville, VA, USA
Duration: Jun 19 1995Jun 21 1995

Other

OtherProceedings of the 1995 53rd Annual Device Research Conference Digest
CityCharlottesville, VA, USA
Period6/19/956/21/95

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Layer composition and mode structure analysis of heterojunction laser diodes by near field scanning optical microscopy'. Together they form a unique fingerprint.

Cite this