The integration of amorphous Ti-Al was investigated for Cu for fabrication of oxide thin film-based capacitors. The Cu and Ta layers remained intact through high temperature oxygen annealing due to the thin oxide layer formed on the Ti-Al surface. The results demonstrated that the Ti-Al/Cu/Ta layered structure provided a good alternative electrode technology to Pt for the fabrication of BST capacitors.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Mar 3 2003|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)