Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices

W. Fan; S. Saha; J. A. Carlisle; O. Auciello; R. P.H. Chang; R. Ramesh

doi:10.1063/1.1556959

Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices

W. Fan^*, S. Saha, J. A. Carlisle, O. Auciello, R. P.H. Chang, R. Ramesh

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

The integration of amorphous Ti-Al was investigated for Cu for fabrication of oxide thin film-based capacitors. The Cu and Ta layers remained intact through high temperature oxygen annealing due to the thin oxide layer formed on the Ti-Al surface. The results demonstrated that the Ti-Al/Cu/Ta layered structure provided a good alternative electrode technology to Pt for the fabrication of BST capacitors.

Original language	English (US)
Pages (from-to)	1452-1454
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	9
DOIs	https://doi.org/10.1063/1.1556959
State	Published - Mar 3 2003

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{d94d18a75818462c9cbfed9cde6a455c,

title = "Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices",

abstract = "The integration of amorphous Ti-Al was investigated for Cu for fabrication of oxide thin film-based capacitors. The Cu and Ta layers remained intact through high temperature oxygen annealing due to the thin oxide layer formed on the Ti-Al surface. The results demonstrated that the Ti-Al/Cu/Ta layered structure provided a good alternative electrode technology to Pt for the fabrication of BST capacitors.",

author = "W. Fan and S. Saha and Carlisle, {J. A.} and O. Auciello and Chang, {R. P.H.} and R. Ramesh",

year = "2003",

month = mar,

day = "3",

doi = "10.1063/1.1556959",

language = "English (US)",

volume = "82",

pages = "1452--1454",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "9",

}

TY - JOUR

T1 - Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices

AU - Fan, W.

AU - Saha, S.

AU - Carlisle, J. A.

AU - Auciello, O.

AU - Chang, R. P.H.

AU - Ramesh, R.

PY - 2003/3/3

Y1 - 2003/3/3

N2 - The integration of amorphous Ti-Al was investigated for Cu for fabrication of oxide thin film-based capacitors. The Cu and Ta layers remained intact through high temperature oxygen annealing due to the thin oxide layer formed on the Ti-Al surface. The results demonstrated that the Ti-Al/Cu/Ta layered structure provided a good alternative electrode technology to Pt for the fabrication of BST capacitors.

AB - The integration of amorphous Ti-Al was investigated for Cu for fabrication of oxide thin film-based capacitors. The Cu and Ta layers remained intact through high temperature oxygen annealing due to the thin oxide layer formed on the Ti-Al surface. The results demonstrated that the Ti-Al/Cu/Ta layered structure provided a good alternative electrode technology to Pt for the fabrication of BST capacitors.

UR - http://www.scopus.com/inward/record.url?scp=0037416594&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037416594&partnerID=8YFLogxK

U2 - 10.1063/1.1556959

DO - 10.1063/1.1556959

M3 - Article

AN - SCOPUS:0037416594

SN - 0003-6951

VL - 82

SP - 1452

EP - 1454

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices

Abstract

ASJC Scopus subject areas

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