LEO of III-nitride on Al2O3 and Si substrates

Manijeh Razeghi*, P. Kung, P. Sandvik, K. Mi, X. Zhang, Vinayak P Dravid, J. Freitas, A. Saxler

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

Lateral epitaxial overgrowth (LEO) has recently become the method of choice to reduce the density of dislocations in heteroepitaxial GaN thin films, and is thus expected to lead to enhanced performance devices. We present here the LEO growth and characterization of GaN films by low pressure metalorganic chemical vapor deposition. Various substrates were used, including basal plane sapphire and (111) oriented Si substrates. The steps in the LEO growth technology will be briefly reviewed. The characterization results will be discussed in detail. The structural, electrical and optical properties of the films were assessed through scanning, atomic and transmission electron microscopy, x-ray diffraction, capacitance-voltage, deep level transient spectroscopy, photoluminescence, and scanning cathodoluminescence measurements. Single-step and double-step LEO GaN was achieved on sapphire. Similarly high quality LEO grown GaN films were obtained on sapphire and silicon substrates. Clear and dramatic reduction in the density of defects are observed in LEO grown materials using the various characterization techniques mentioned previously.

Original languageEnglish (US)
Pages (from-to)320-329
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3948
StatePublished - Jan 1 2000
EventPhotodetectors: Materials and Devices V - San Jose, CA, USA
Duration: Jan 25 2000Jan 28 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'LEO of III-nitride on Al<sub>2</sub>O<sub>3</sub> and Si substrates'. Together they form a unique fingerprint.

Cite this