Letter avalanche photodetector based on inas/insb superlattice

Arash Dehzangi, Jiakai Li, Lakshay Gautam, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalLetterpeer-review

15 Scopus citations


This work demonstrates a mid-wavelength infrared InAs/InSb superlattice avalanche photodiode (APD). The superlattice APD structure was grown by molecular beam epitaxy on GaSb substrate. The device exhibits a 100 % cut-off wavelength of 4.6 µm at 150 K and 4.30 µm at 77 K. At 150 and 77 K, the device responsivity reaches peak values of 2.49 and 2.32 A/W at 3.75 µm under −1.0 V applied bias, respectively. The device reveals an electron dominated avalanching mechanism with a gain value of 6 at 150 K and 7.4 at 77 K which was observed under −6.5 V bias voltage. The gain value was measured at different temperatures and different diode sizes. The electron and hole impact ionization coefficients were calculated and compared to give a better prospect of the performance of the device.

Original languageEnglish (US)
Pages (from-to)591-599
Number of pages9
JournalQuantum Reports
Issue number4
StatePublished - Dec 2020


  • Avalanche photodiode
  • Gain
  • Impact ionization coefficient
  • Quantum efficiency
  • Superlattice

ASJC Scopus subject areas

  • Astronomy and Astrophysics
  • Atomic and Molecular Physics, and Optics
  • Statistical and Nonlinear Physics
  • Physics and Astronomy (miscellaneous)


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