Abstract
We propose, demonstrate, and assess a nontunneling-based nMOS voltage-controlled negative differential resistance (V-NDR) concept for overcoming the intrinsic efficiency and reliability shortcomings of magnetic random access memory memories (MRAM). Using nMOS V-NDR circuits in series with MRAM tunnel junctions, we experimentally observe 40 times reduction in current during switching, enabling write termination and read margin amplification. Large scale Monte Carlo simulations also show 5X improvement in write energy savings and demonstrate the robustness of the scheme against device variability.
Original language | English (US) |
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Article number | 8024018 |
Pages (from-to) | 4084-4090 |
Number of pages | 7 |
Journal | IEEE Transactions on Electron Devices |
Volume | 64 |
Issue number | 10 |
DOIs | |
State | Published - Oct 2017 |
Keywords
- Magnetic random access memory (MRAM)
- negative differential resistance
- read disturbance
- read margin
- readout circuits
- reliability
- resistive memory
- write termination
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering