Local density valence band offset in GaAs/AlAs: Role of interface dipole

S. Massidda; B. I. Min; A. J. Freeman

doi:10.1016/0749-6036(88)90259-5

Local density valence band offset in GaAs/AlAs: Role of interface dipole

S. Massidda^*, B. I. Min, A. J. Freeman

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The valence band offset, ΔE_V,at the lattice-matched GaAs/AlAs(001) interface is derived from highly precise self- consistent all-electron local density band structure calculations of the (GaAs)_n(AlAs)_n(001) superlattices (with n ≤ 3). Using the core levels as reference energies, we find that ΔE_V = 0.50 ± 0.05 eV, in very good agreement with recent experimental results (ΔE_V = 0.45 - 0.55 eV). The dependence of ΔE_V on the superlattice thickness is studied and related to the interface charge redistribution which produces an interface dipole potential estimated to be ∼ 0.14 eV.

Original language	English (US)
Pages (from-to)	15-17
Number of pages	3
Journal	Superlattices and Microstructures
Volume	4
Issue number	1
DOIs	https://doi.org/10.1016/0749-6036(88)90259-5
State	Published - 1988

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Local density valence band offset in GaAs/AlAs: Role of interface dipole",

abstract = "The valence band offset, ΔEV,at the lattice-matched GaAs/AlAs(001) interface is derived from highly precise self- consistent all-electron local density band structure calculations of the (GaAs)n(AlAs)n(001) superlattices (with n ≤ 3). Using the core levels as reference energies, we find that ΔEV = 0.50 ± 0.05 eV, in very good agreement with recent experimental results (ΔEV = 0.45 - 0.55 eV). The dependence of ΔEV on the superlattice thickness is studied and related to the interface charge redistribution which produces an interface dipole potential estimated to be ∼ 0.14 eV.",

author = "S. Massidda and Min, {B. I.} and Freeman, {A. J.}",

year = "1988",

doi = "10.1016/0749-6036(88)90259-5",

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TY - JOUR

T1 - Local density valence band offset in GaAs/AlAs

T2 - Role of interface dipole

AU - Massidda, S.

AU - Min, B. I.

AU - Freeman, A. J.

PY - 1988

Y1 - 1988

N2 - The valence band offset, ΔEV,at the lattice-matched GaAs/AlAs(001) interface is derived from highly precise self- consistent all-electron local density band structure calculations of the (GaAs)n(AlAs)n(001) superlattices (with n ≤ 3). Using the core levels as reference energies, we find that ΔEV = 0.50 ± 0.05 eV, in very good agreement with recent experimental results (ΔEV = 0.45 - 0.55 eV). The dependence of ΔEV on the superlattice thickness is studied and related to the interface charge redistribution which produces an interface dipole potential estimated to be ∼ 0.14 eV.

AB - The valence band offset, ΔEV,at the lattice-matched GaAs/AlAs(001) interface is derived from highly precise self- consistent all-electron local density band structure calculations of the (GaAs)n(AlAs)n(001) superlattices (with n ≤ 3). Using the core levels as reference energies, we find that ΔEV = 0.50 ± 0.05 eV, in very good agreement with recent experimental results (ΔEV = 0.45 - 0.55 eV). The dependence of ΔEV on the superlattice thickness is studied and related to the interface charge redistribution which produces an interface dipole potential estimated to be ∼ 0.14 eV.

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