Local density valence band offset in GaAs/AlAs: Role of interface dipole

S. Massidda; B. I. Min; A. J. Freeman

doi:10.1016/0749-6036(88)90259-5

Local density valence band offset in GaAs/AlAs: Role of interface dipole

S. Massidda^*, B. I. Min, A. J. Freeman

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The valence band offset, ΔE_V,at the lattice-matched GaAs/AlAs(001) interface is derived from highly precise self- consistent all-electron local density band structure calculations of the (GaAs)_n(AlAs)_n(001) superlattices (with n ≤ 3). Using the core levels as reference energies, we find that ΔE_V = 0.50 ± 0.05 eV, in very good agreement with recent experimental results (ΔE_V = 0.45 - 0.55 eV). The dependence of ΔE_V on the superlattice thickness is studied and related to the interface charge redistribution which produces an interface dipole potential estimated to be ∼ 0.14 eV.

Original language	English (US)
Pages (from-to)	15-17
Number of pages	3
Journal	Superlattices and Microstructures
Volume	4
Issue number	1
DOIs	https://doi.org/10.1016/0749-6036(88)90259-5
State	Published - 1988

Funding

m - Work supported by the National Science Foundation (through the Northwestern University Katerlals Research Center grant No. DIIR 852028).

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/0749-6036(88)90259-5

Cite this

@article{66f2a7147c844468857747820eb0969c,

title = "Local density valence band offset in GaAs/AlAs: Role of interface dipole",

abstract = "The valence band offset, ΔEV,at the lattice-matched GaAs/AlAs(001) interface is derived from highly precise self- consistent all-electron local density band structure calculations of the (GaAs)n(AlAs)n(001) superlattices (with n ≤ 3). Using the core levels as reference energies, we find that ΔEV = 0.50 ± 0.05 eV, in very good agreement with recent experimental results (ΔEV = 0.45 - 0.55 eV). The dependence of ΔEV on the superlattice thickness is studied and related to the interface charge redistribution which produces an interface dipole potential estimated to be ∼ 0.14 eV.",

author = "S. Massidda and Min, {B. I.} and Freeman, {A. J.}",

note = "Funding Information: m - Work supported by the National Science Foundation (through the Northwestern Funding Information: University Katerlals Research Center grant No. DIIR 852028).",

year = "1988",

doi = "10.1016/0749-6036(88)90259-5",

language = "English (US)",

volume = "4",

pages = "15--17",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "1",

}

TY - JOUR

T1 - Local density valence band offset in GaAs/AlAs

T2 - Role of interface dipole

AU - Massidda, S.

AU - Min, B. I.

AU - Freeman, A. J.

N1 - Funding Information: m - Work supported by the National Science Foundation (through the Northwestern Funding Information: University Katerlals Research Center grant No. DIIR 852028).

PY - 1988

Y1 - 1988

N2 - The valence band offset, ΔEV,at the lattice-matched GaAs/AlAs(001) interface is derived from highly precise self- consistent all-electron local density band structure calculations of the (GaAs)n(AlAs)n(001) superlattices (with n ≤ 3). Using the core levels as reference energies, we find that ΔEV = 0.50 ± 0.05 eV, in very good agreement with recent experimental results (ΔEV = 0.45 - 0.55 eV). The dependence of ΔEV on the superlattice thickness is studied and related to the interface charge redistribution which produces an interface dipole potential estimated to be ∼ 0.14 eV.

AB - The valence band offset, ΔEV,at the lattice-matched GaAs/AlAs(001) interface is derived from highly precise self- consistent all-electron local density band structure calculations of the (GaAs)n(AlAs)n(001) superlattices (with n ≤ 3). Using the core levels as reference energies, we find that ΔEV = 0.50 ± 0.05 eV, in very good agreement with recent experimental results (ΔEV = 0.45 - 0.55 eV). The dependence of ΔEV on the superlattice thickness is studied and related to the interface charge redistribution which produces an interface dipole potential estimated to be ∼ 0.14 eV.

UR - http://www.scopus.com/inward/record.url?scp=0023538636&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023538636&partnerID=8YFLogxK

U2 - 10.1016/0749-6036(88)90259-5

DO - 10.1016/0749-6036(88)90259-5

M3 - Article

AN - SCOPUS:0023538636

SN - 0749-6036

VL - 4

SP - 15

EP - 17

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 1

ER -

Local density valence band offset in GaAs/AlAs: Role of interface dipole

Abstract

Funding

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this