TY - JOUR
T1 - Local density valence band offset in GaAs/AlAs
T2 - Role of interface dipole
AU - Massidda, S.
AU - Min, B. I.
AU - Freeman, A. J.
N1 - Funding Information:
m - Work supported by the National Science Foundation (through the Northwestern
Funding Information:
University Katerlals Research Center grant No. DIIR 852028).
PY - 1988
Y1 - 1988
N2 - The valence band offset, ΔEV,at the lattice-matched GaAs/AlAs(001) interface is derived from highly precise self- consistent all-electron local density band structure calculations of the (GaAs)n(AlAs)n(001) superlattices (with n ≤ 3). Using the core levels as reference energies, we find that ΔEV = 0.50 ± 0.05 eV, in very good agreement with recent experimental results (ΔEV = 0.45 - 0.55 eV). The dependence of ΔEV on the superlattice thickness is studied and related to the interface charge redistribution which produces an interface dipole potential estimated to be ∼ 0.14 eV.
AB - The valence band offset, ΔEV,at the lattice-matched GaAs/AlAs(001) interface is derived from highly precise self- consistent all-electron local density band structure calculations of the (GaAs)n(AlAs)n(001) superlattices (with n ≤ 3). Using the core levels as reference energies, we find that ΔEV = 0.50 ± 0.05 eV, in very good agreement with recent experimental results (ΔEV = 0.45 - 0.55 eV). The dependence of ΔEV on the superlattice thickness is studied and related to the interface charge redistribution which produces an interface dipole potential estimated to be ∼ 0.14 eV.
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U2 - 10.1016/0749-6036(88)90259-5
DO - 10.1016/0749-6036(88)90259-5
M3 - Article
AN - SCOPUS:0023538636
VL - 4
SP - 15
EP - 17
JO - Superlattices and Microstructures
JF - Superlattices and Microstructures
SN - 0749-6036
IS - 1
ER -