Abstract
The valence band offset, ΔEV,at the lattice-matched GaAs/AlAs(001) interface is derived from highly precise self- consistent all-electron local density band structure calculations of the (GaAs)n(AlAs)n(001) superlattices (with n ≤ 3). Using the core levels as reference energies, we find that ΔEV = 0.50 ± 0.05 eV, in very good agreement with recent experimental results (ΔEV = 0.45 - 0.55 eV). The dependence of ΔEV on the superlattice thickness is studied and related to the interface charge redistribution which produces an interface dipole potential estimated to be ∼ 0.14 eV.
Original language | English (US) |
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Pages (from-to) | 15-17 |
Number of pages | 3 |
Journal | Superlattices and Microstructures |
Volume | 4 |
Issue number | 1 |
DOIs | |
State | Published - 1988 |
Funding
m - Work supported by the National Science Foundation (through the Northwestern University Katerlals Research Center grant No. DIIR 852028).
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Electrical and Electronic Engineering