Local density valence band offset in GaAs/AlAs: Role of interface dipole

S. Massidda*, B. I. Min, A. J. Freeman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


The valence band offset, ΔEV,at the lattice-matched GaAs/AlAs(001) interface is derived from highly precise self- consistent all-electron local density band structure calculations of the (GaAs)n(AlAs)n(001) superlattices (with n ≤ 3). Using the core levels as reference energies, we find that ΔEV = 0.50 ± 0.05 eV, in very good agreement with recent experimental results (ΔEV = 0.45 - 0.55 eV). The dependence of ΔEV on the superlattice thickness is studied and related to the interface charge redistribution which produces an interface dipole potential estimated to be ∼ 0.14 eV.

Original languageEnglish (US)
Pages (from-to)15-17
Number of pages3
JournalSuperlattices and Microstructures
Issue number1
StatePublished - 1988

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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