Local structure of Sn/Si(001) surface phases

P. F. Lyman, Michael J Bedzyk*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

The surface structures of the (6 × 2), c(8 × 4) and (5 × 1) phases of Sn/Si(001) were studied using the X-ray standing wave technique. Using the (004) and (022) Bragg reflections, we find that the (6 × 2) and c(8 × 4) phases are composed of highly buckled Sn-Sn ad-dimers located 1.58 A× above the bulk-like Si(004) surface atomic plane. The Sn atoms occupy two distinct sites with a vertical separation of 0.68 Å, resulting in a dimer buckling angle of approximately 14°. Occupation of second-layer sites by Sn in the (5 × 1) phase, and even in the high-coverage region of the c(8 × 4) phase, changes the Sn spatial distribution normal to the surface, which we attribute to unbuckling and/or breaking of the dimers in the first layer. Auger electron spectroscopy; Low-index single crystal surfaces; Photon absorption spectroscopy; Silicon; Surface relaxation and reconstruction; Surface structure, morphology, roughness and topography; Tin; X-ray scattering, diffraction and reflection.

Original languageEnglish (US)
Pages (from-to)307-315
Number of pages9
JournalSurface Science
Volume371
Issue number2-3
DOIs
StatePublished - Feb 1 1997

Keywords

  • Auger electron spectroscopy
  • Low-index single cristal surfaces
  • Photon absorption spectroscopy
  • Silicon
  • Surface relaxation and reconstruction
  • Surface structure, morphology, roughness and topography
  • Tin
  • X-ray scattering, diffraction and reflection

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Local structure of Sn/Si(001) surface phases'. Together they form a unique fingerprint.

Cite this