Abstract
VCSELs have emerged as an important device for several key applications. Nearly all VCSELs reported contain Al, which easily oxidizes and degrades the device. As of yet, very little effort has been put into Al-free VCSELs. We demonstrate an Al-free GaInP/GaAs DBR with a reflectivity of 0.989 near 0.98 μm. We also show the benefits of localized epitaxy for the growth of mismatched epilayers, which can cut down on the effects of dislocations. These are two pieces to the puzzle of producing longer-wavelength (> 1 μm) Al-free VCSELs on GaAs substrates.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1637-1642 |
| Number of pages | 6 |
| Journal | Materials Science Forum |
| Volume | 258-263 |
| Issue number | 9993 |
| DOIs | |
| State | Published - 1997 |
Keywords
- Al-free
- Distributed Bragg reflector
- Localized epitaxy
- Misfit dislocation
- VCSEL
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering