Localized epitaxy for vertical cavity surface emitting laser applications

M. Erdtmann*, S. Kim, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

VCSELs have emerged as an important device for several key applications. Nearly all VCSELs reported contain Al, which easily oxidizes and degrades the device. As of yet, very little effort has been put into Al-free VCSELs. We demonstrate an Al-free GaInP/GaAs DBR with a reflectivity of 0.989 near 0.98 μm. We also show the benefits of localized epitaxy for the growth of mismatched epilayers, which can cut down on the effects of dislocations. These are two pieces to the puzzle of producing longer-wavelength (> 1 μm) Al-free VCSELs on GaAs substrates.

Original languageEnglish (US)
Pages (from-to)1637-1642
Number of pages6
JournalMaterials Science Forum
Volume258-263
Issue number9993
DOIs
StatePublished - 1997

Keywords

  • Al-free
  • Distributed Bragg reflector
  • Localized epitaxy
  • Misfit dislocation
  • VCSEL

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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