Long-term Room Temperature Instability in Thermal Conductivity of InGaZnO Thin Films

Boya Cui; D. Bruce Buchholz; Li Zeng; Michael J Bedzyk; R P H Chang; Matthew A Grayson

Long-term Room Temperature Instability in Thermal Conductivity of InGaZnO Thin Films

Boya Cui, D. Bruce Buchholz, Li Zeng, Michael J Bedzyk, R P H Chang, Matthew A Grayson

Research output: Contribution to journal › Article › peer-review

Abstract

The cross-plane thermal conductivities of InGaZnO (IGZO) thin films in different morphologies were measured on three occasions within 19 months, using the 3ω method at room temperature 300 K. Amorphous (a-), semi-crystalline (semi-c-) and crystalline (c-) IGZO films were grown by pulsed laser deposition (PLD), followed by X-ray diffraction (XRD) for evaluation of film quality and crystallinity. Semi-c-IGZO shows the highest thermal conductivity, even higher than the most ordered crystal-like phase. After being stored in dry low-oxygen environment for months, a drastic decrease of semi-c-IGZO thermal conductivity was observed, while the thermal conductivity slightly reduced in c-IGZO and remained unchanged in a-IGZO. This change in thermal conductivity with storage time can be attributed to film structural relaxation and vacancy diffusion to grain boundaries.

Original language	English (US)
Pages (from-to)	1631-1636
Number of pages	6
Journal	MRS Advances
Volume	1
Issue number	22
State	Published - 2016

Cite this

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title = "Long-term Room Temperature Instability in Thermal Conductivity of InGaZnO Thin Films",

abstract = "The cross-plane thermal conductivities of InGaZnO (IGZO) thin films in different morphologies were measured on three occasions within 19 months, using the 3ω method at room temperature 300 K. Amorphous (a-), semi-crystalline (semi-c-) and crystalline (c-) IGZO films were grown by pulsed laser deposition (PLD), followed by X-ray diffraction (XRD) for evaluation of film quality and crystallinity. Semi-c-IGZO shows the highest thermal conductivity, even higher than the most ordered crystal-like phase. After being stored in dry low-oxygen environment for months, a drastic decrease of semi-c-IGZO thermal conductivity was observed, while the thermal conductivity slightly reduced in c-IGZO and remained unchanged in a-IGZO. This change in thermal conductivity with storage time can be attributed to film structural relaxation and vacancy diffusion to grain boundaries.",

author = "Boya Cui and Buchholz, {D. Bruce} and Li Zeng and Bedzyk, {Michael J} and Chang, {R P H} and Grayson, {Matthew A}",

note = "https://doi.org/10.1557/adv.2016.142 ",

year = "2016",

language = "English (US)",

volume = "1",

pages = "1631--1636",

journal = "MRS Advances",

number = "22",

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TY - JOUR

T1 - Long-term Room Temperature Instability in Thermal Conductivity of InGaZnO Thin Films

AU - Cui, Boya

AU - Buchholz, D. Bruce

AU - Zeng, Li

AU - Bedzyk, Michael J

AU - Chang, R P H

AU - Grayson, Matthew A

N1 - https://doi.org/10.1557/adv.2016.142

PY - 2016

Y1 - 2016

N2 - The cross-plane thermal conductivities of InGaZnO (IGZO) thin films in different morphologies were measured on three occasions within 19 months, using the 3ω method at room temperature 300 K. Amorphous (a-), semi-crystalline (semi-c-) and crystalline (c-) IGZO films were grown by pulsed laser deposition (PLD), followed by X-ray diffraction (XRD) for evaluation of film quality and crystallinity. Semi-c-IGZO shows the highest thermal conductivity, even higher than the most ordered crystal-like phase. After being stored in dry low-oxygen environment for months, a drastic decrease of semi-c-IGZO thermal conductivity was observed, while the thermal conductivity slightly reduced in c-IGZO and remained unchanged in a-IGZO. This change in thermal conductivity with storage time can be attributed to film structural relaxation and vacancy diffusion to grain boundaries.

AB - The cross-plane thermal conductivities of InGaZnO (IGZO) thin films in different morphologies were measured on three occasions within 19 months, using the 3ω method at room temperature 300 K. Amorphous (a-), semi-crystalline (semi-c-) and crystalline (c-) IGZO films were grown by pulsed laser deposition (PLD), followed by X-ray diffraction (XRD) for evaluation of film quality and crystallinity. Semi-c-IGZO shows the highest thermal conductivity, even higher than the most ordered crystal-like phase. After being stored in dry low-oxygen environment for months, a drastic decrease of semi-c-IGZO thermal conductivity was observed, while the thermal conductivity slightly reduced in c-IGZO and remained unchanged in a-IGZO. This change in thermal conductivity with storage time can be attributed to film structural relaxation and vacancy diffusion to grain boundaries.

M3 - Article

VL - 1

SP - 1631

EP - 1636

JO - MRS Advances

JF - MRS Advances

IS - 22

ER -

Long-term Room Temperature Instability in Thermal Conductivity of InGaZnO Thin Films

Abstract

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