Long-wavelength emission InAs quantum dots grown on lnGaAs metamorphic buffers

B. P. Wu, Donghai Wu, Y. H. Xiong, S. S. Huang, H. Q. Ni, Y. Q. Xu, Z. C. Niu

Research output: Contribution to journalArticlepeer-review


In this work, InAs quantum dots (QDs) grown on a linear graded lnGaAs metamorphic buffer layer by molecular beam epitaxy have been investigated. The growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (AFM). InAs QD5 were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 m as measured by photoluminescence (PL). The effects of post-growth rapid thermal annealing (RTA) on the optical properties of the InAs QDs were investigated. After the RTA, the PL peak of the QD5 was blue- shifted and the full width at half maximum decreased. Copyright

Original languageEnglish (US)
Pages (from-to)1333-1336
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Issue number2
StatePublished - Feb 1 2009


  • Metamorphic buffer
  • Molecular beam epitaxy
  • lnas quantum dots

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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