Long-wavelength emission InAs quantum dots grown on lnGaAs metamorphic buffers

In this work, InAs quantum dots (QDs) grown on a linear graded lnGaAs metamorphic buffer layer by molecular beam epitaxy have been investigated. The growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (AFM). InAs QD5 were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 m as measured by photoluminescence (PL). The effects of post-growth rapid thermal annealing (RTA) on the optical properties of the InAs QDs were investigated. After the RTA, the PL peak of the QD5 was blue- shifted and the full width at half maximum decreased. Copyright