Long-wavelength InAs1-xSbx photoconductors operated without cryogenic cooling are reported. The devices are based on p-InAs1-xSbx/p-InSb heterostructures grown on (100) semi-insulating GaAs substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Photoreponse up to 14 μm has been obtained in a sample with x=0.77 at 300 K, which is in good agreement with the measured infrared absorption spectra. The corresponding effective lifetime of ≊0.14 ns at 300 K has been derived from stationary photoconductivity. The Johnson noise limited detectivity at λ=10.6 μm is estimated to be about 3.27×107 cmHz1/2/W at 300 K.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)