Long-wavelength InAsSb photoconductors operated at near room temperatures (200-300 K)

J. D. Kim*, Donghai Wu, J. Wojkowski, J. Piotrowski, J. Xu, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

65 Scopus citations

Abstract

Long-wavelength InAs1-xSbx photoconductors operated without cryogenic cooling are reported. The devices are based on p-InAs1-xSbx/p-InSb heterostructures grown on (100) semi-insulating GaAs substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Photoreponse up to 14 μm has been obtained in a sample with x=0.77 at 300 K, which is in good agreement with the measured infrared absorption spectra. The corresponding effective lifetime of ≊0.14 ns at 300 K has been derived from stationary photoconductivity. The Johnson noise limited detectivity at λ=10.6 μm is estimated to be about 3.27×107 cmHz1/2/W at 300 K.

Original languageEnglish (US)
Pages (from-to)99-101
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number1
DOIs
StatePublished - Dec 1 1996

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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