Long-wavelength infrared photodetectors based on InSbBi grown on GaAs substrates

J. J. Lee*, J. D. Kim, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

We demonstrate the operation of InSbBi infrared photoconductive detectors grown by low-pressure metalorganic chemical vapor deposition on semi-insulating GaAs substrates. The fabricated photodetector showed a cutoff wavelength of 7.7 μm at 77 K. The responsivity of the InSbBi photodetector at 7 μm was about 3.2 V/W at 77 K. The corresponding Johnson-noise limited detectivity was 4.7 × 108 cm Hz1/2/W. The carrier lifetime was estimated to be about 86 ns from the voltage-dependent responsivity measurements.

Original languageEnglish (US)
Pages (from-to)2298-2300
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number16
DOIs
StatePublished - Oct 20 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint

Dive into the research topics of 'Long-wavelength infrared photodetectors based on InSbBi grown on GaAs substrates'. Together they form a unique fingerprint.

Cite this