The operation of uncooled InAs-GaSb superlattice photodiodes with a cutoff wavelength of λ c = 8 μm and a peak detectivity of 1.2 × 10 8 cmHz 1/2/W at zero bias is demonstrated. The detectivity is similar to the best uncooled HgCdTe detectors and microbolometers. However, the R 0A product is more than two orders of magnitude higher than HgCdTe and the device is more than four orders of magnitude faster than microbolometers. These features combined with their low 1/f noise and high uniformity make these type-II photodiodes an excellent choice for uncooled high-speed IR imaging arrays.
- Infrared detectors
- Infrared imaging
- Semiconductor devices
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering