Long-wavelength type-II photodiodes operating at room temperature

H. Mohseni; M. Razeghi

doi:10.1109/68.920771

Long-wavelength type-II photodiodes operating at room temperature

H. Mohseni, M. Razeghi^*

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

The operation of uncooled InAs-GaSb superlattice photodiodes with a cutoff wavelength of λ _c = 8 μm and a peak detectivity of 1.2 × 10 ⁸ cmHz ^1/2/W at zero bias is demonstrated. The detectivity is similar to the best uncooled HgCdTe detectors and microbolometers. However, the R ₀A product is more than two orders of magnitude higher than HgCdTe and the device is more than four orders of magnitude faster than microbolometers. These features combined with their low 1/f noise and high uniformity make these type-II photodiodes an excellent choice for uncooled high-speed IR imaging arrays.

Original language	English (US)
Pages (from-to)	517-519
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	13
Issue number	5
DOIs	https://doi.org/10.1109/68.920771
State	Published - May 2001

Funding

Manuscript received November 1, 2000; revised January 22, 2001. This work was supported in part by the Office of Naval Research under Contract N00014-99-1-0630. The authors are with the Center for Quantum Devices, Electrical and Computer Engineering Department, Northwestern University, Evanston, IL 60208 USA (e-mail: [email protected]). Publisher Item Identifier S 1041-1135(01)03777-6.

Keywords

Infrared detectors
Infrared imaging
Photodiodes
Semiconductor devices
Superlattices

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.920771

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title = "Long-wavelength type-II photodiodes operating at room temperature",

abstract = "The operation of uncooled InAs-GaSb superlattice photodiodes with a cutoff wavelength of λ c = 8 μm and a peak detectivity of 1.2 × 10 8 cmHz 1/2/W at zero bias is demonstrated. The detectivity is similar to the best uncooled HgCdTe detectors and microbolometers. However, the R 0A product is more than two orders of magnitude higher than HgCdTe and the device is more than four orders of magnitude faster than microbolometers. These features combined with their low 1/f noise and high uniformity make these type-II photodiodes an excellent choice for uncooled high-speed IR imaging arrays.",

keywords = "Infrared detectors, Infrared imaging, Photodiodes, Semiconductor devices, Superlattices",

author = "H. Mohseni and M. Razeghi",

note = "Funding Information: Manuscript received November 1, 2000; revised January 22, 2001. This work was supported in part by the Office of Naval Research under Contract N00014-99-1-0630. The authors are with the Center for Quantum Devices, Electrical and Computer Engineering Department, Northwestern University, Evanston, IL 60208 USA (e-mail: [email protected]). Publisher Item Identifier S 1041-1135(01)03777-6.",

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T1 - Long-wavelength type-II photodiodes operating at room temperature

AU - Mohseni, H.

AU - Razeghi, M.

N1 - Funding Information: Manuscript received November 1, 2000; revised January 22, 2001. This work was supported in part by the Office of Naval Research under Contract N00014-99-1-0630. The authors are with the Center for Quantum Devices, Electrical and Computer Engineering Department, Northwestern University, Evanston, IL 60208 USA (e-mail: [email protected]). Publisher Item Identifier S 1041-1135(01)03777-6.

PY - 2001/5

Y1 - 2001/5

N2 - The operation of uncooled InAs-GaSb superlattice photodiodes with a cutoff wavelength of λ c = 8 μm and a peak detectivity of 1.2 × 10 8 cmHz 1/2/W at zero bias is demonstrated. The detectivity is similar to the best uncooled HgCdTe detectors and microbolometers. However, the R 0A product is more than two orders of magnitude higher than HgCdTe and the device is more than four orders of magnitude faster than microbolometers. These features combined with their low 1/f noise and high uniformity make these type-II photodiodes an excellent choice for uncooled high-speed IR imaging arrays.

AB - The operation of uncooled InAs-GaSb superlattice photodiodes with a cutoff wavelength of λ c = 8 μm and a peak detectivity of 1.2 × 10 8 cmHz 1/2/W at zero bias is demonstrated. The detectivity is similar to the best uncooled HgCdTe detectors and microbolometers. However, the R 0A product is more than two orders of magnitude higher than HgCdTe and the device is more than four orders of magnitude faster than microbolometers. These features combined with their low 1/f noise and high uniformity make these type-II photodiodes an excellent choice for uncooled high-speed IR imaging arrays.

KW - Infrared detectors

KW - Infrared imaging

KW - Photodiodes

KW - Semiconductor devices

KW - Superlattices

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Long-wavelength type-II photodiodes operating at room temperature

Abstract

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Keywords

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