Longitudinal carrier density profiling in semiconductor lasers via spectral analysis of side spontaneous emission

Edward H. Sargent*, Dorothy Pavlidis, Hanan Anis, Nicolae Golinescu, J. M. Xu, Richard Clayton, Hyung B. Kim

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

A combined experimental and theoretical approach to measuring the variation in carrier density along the length of a semiconductor laser is developed. It is shown that by following the rate of increase of the principal spectral peak, rather than monitoring the optical power at a fixed energy, measurements can be made less susceptible to the effects of heating in the sample. Experimental results showing the development of the longitudinal carrier density profile with injected current are presented and, when compared with the results of self-consistent modeling, provide insights into the internal operating mechanisms of the laser.

Original languageEnglish (US)
Pages (from-to)1904-1906
Number of pages3
JournalJournal of Applied Physics
Volume80
Issue number3
DOIs
StatePublished - Aug 1 1996

ASJC Scopus subject areas

  • General Physics and Astronomy

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