Lorentz microscopy study of magnetization reversal mechanism in magnetic tunnel junction elements

Ping Shang*, Andrew Hogwood, Amanda K. Petford-Long, Thomas C. Anthony

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations

Abstract

The magnetization reversal mechanism of four different shaped (rectangular, elliptical, trapezoidal, and hexagonal) tunnel junction elements with area ranging from 0.04 to 12 μm2 has been investigated using Lorentz transmission electron microscopy. It has been found that the reversal field is influenced by element size and aspect ratio but is not strongly dependent upon the element shape. 360° domain walls were often observed to form in the elements and were sustained to a high field when the relative magnetization configuration of the free and pinned layers changed from parallel to antiparallel. The formation of 360° domain walls depends strongly on the shape and aspect ratio of the element, with a lower probability of formation in elements with either an aspect ratio of 1:1 or a hexagonal shape.

Original languageEnglish (US)
Pages (from-to)7368-7370
Number of pages3
JournalJournal of Applied Physics
Volume89
Issue number11 II
DOIs
StatePublished - Jun 1 2001
Event8th Joint Magnetism and Magnetic Materials-Intermag Conference - San Antonio, TX, United States
Duration: Jan 7 2001Jan 11 2001

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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