Low Dark Current Deep UV AlGaN Photodetectors on AlN Substrate

Lakshay Gautam, Junhee Lee, Gail Brown, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We report high quality, low dark current, deep Ultraviolet AlGaN/AlN Photodetectors on AlN substrate. AlGaN based Photodetectors are grown and fabricated both on AlN and Sapphire substrates with the same epilayer structure. Subsequently, electrical characteristics of both photodetectors on AlN substrate and Sapphire are compared. A reduction of 4 orders of magnitude of dark current density is reported in UV detectors grown on AlN substrate with respect to Sapphire substrate.

Original languageEnglish (US)
JournalIEEE Journal of Quantum Electronics
Volume58
Issue number3
DOIs
StatePublished - Jun 1 2022

Keywords

  • Aluminum gallium nitride
  • avalanche breakdown
  • p-i-n diodes
  • photodetectors
  • ultraviolet

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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