Low Dark Current Deep UV AlGaN Photodetectors on AlN Substrate

Lakshay Gautam; Junhee Lee; Gail Brown; Manijeh Razeghi

doi:10.1109/JQE.2022.3154475

Low Dark Current Deep UV AlGaN Photodetectors on AlN Substrate

Lakshay Gautam, Junhee Lee, Gail Brown, Manijeh Razeghi^*

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We report high quality, low dark current, deep Ultraviolet AlGaN/AlN Photodetectors on AlN substrate. AlGaN based Photodetectors are grown and fabricated both on AlN and Sapphire substrates with the same epilayer structure. Subsequently, electrical characteristics of both photodetectors on AlN substrate and Sapphire are compared. A reduction of 4 orders of magnitude of dark current density is reported in UV detectors grown on AlN substrate with respect to Sapphire substrate.

Original language	English (US)
Journal	IEEE Journal of Quantum Electronics
Volume	58
Issue number	3
DOIs	https://doi.org/10.1109/JQE.2022.3154475
State	Published - Jun 1 2022

Funding

The work of Lakshay Gautam and Junhee Lee was supported by the Walter P. Murphy Society Fellowship at Northwestern University.

Keywords

Aluminum gallium nitride
avalanche breakdown
p-i-n diodes
photodetectors
ultraviolet

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.2022.3154475

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title = "Low Dark Current Deep UV AlGaN Photodetectors on AlN Substrate",

abstract = "We report high quality, low dark current, deep Ultraviolet AlGaN/AlN Photodetectors on AlN substrate. AlGaN based Photodetectors are grown and fabricated both on AlN and Sapphire substrates with the same epilayer structure. Subsequently, electrical characteristics of both photodetectors on AlN substrate and Sapphire are compared. A reduction of 4 orders of magnitude of dark current density is reported in UV detectors grown on AlN substrate with respect to Sapphire substrate.",

keywords = "Aluminum gallium nitride, avalanche breakdown, p-i-n diodes, photodetectors, ultraviolet",

author = "Lakshay Gautam and Junhee Lee and Gail Brown and Manijeh Razeghi",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.",

year = "2022",

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doi = "10.1109/JQE.2022.3154475",

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T1 - Low Dark Current Deep UV AlGaN Photodetectors on AlN Substrate

AU - Gautam, Lakshay

AU - Lee, Junhee

AU - Brown, Gail

AU - Razeghi, Manijeh

PY - 2022/6/1

Y1 - 2022/6/1

N2 - We report high quality, low dark current, deep Ultraviolet AlGaN/AlN Photodetectors on AlN substrate. AlGaN based Photodetectors are grown and fabricated both on AlN and Sapphire substrates with the same epilayer structure. Subsequently, electrical characteristics of both photodetectors on AlN substrate and Sapphire are compared. A reduction of 4 orders of magnitude of dark current density is reported in UV detectors grown on AlN substrate with respect to Sapphire substrate.

AB - We report high quality, low dark current, deep Ultraviolet AlGaN/AlN Photodetectors on AlN substrate. AlGaN based Photodetectors are grown and fabricated both on AlN and Sapphire substrates with the same epilayer structure. Subsequently, electrical characteristics of both photodetectors on AlN substrate and Sapphire are compared. A reduction of 4 orders of magnitude of dark current density is reported in UV detectors grown on AlN substrate with respect to Sapphire substrate.

KW - Aluminum gallium nitride

KW - avalanche breakdown

KW - p-i-n diodes

KW - photodetectors

KW - ultraviolet

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SN - 0018-9197

VL - 58

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

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ER -

Low Dark Current Deep UV AlGaN Photodetectors on AlN Substrate

Abstract

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Keywords

ASJC Scopus subject areas

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