We report high quality, low dark current, deep Ultraviolet AlGaN/AlN Photodetectors on AlN substrate. AlGaN based Photodetectors are grown and fabricated both on AlN and Sapphire substrates with the same epilayer structure. Subsequently, electrical characteristics of both photodetectors on AlN substrate and Sapphire are compared. A reduction of 4 orders of magnitude of dark current density is reported in UV detectors grown on AlN substrate with respect to Sapphire substrate.
- Aluminum gallium nitride
- avalanche breakdown
- p-i-n diodes
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering