Low electron scattering potentials in high performance Mg 2Si0.45Sn0.55 based thermoelectric solid solutions with band convergence

Xiaohua Liu, Tiejun Zhu, Heng Wang, Lipeng Hu, Hanhui Xie, Guangyu Jiang, G. Jeffrey Snyder, Xinbing Zhao

Research output: Contribution to journalArticlepeer-review

241 Scopus citations

Abstract

Understanding the electron and phonon transport characteristics is crucial for designing and developing high performance thermoelectric materials. Weak scattering effects on charge carriers, characterized by deformation potential and alloy scattering potential, are favorable for thermoelectric solid solutions to enable high carrier mobility and thereby promising thermoelectric performance. Mg 2 (Si,Sn) solid solutions have attracted much attention due to their low cost and environmental compatibility. Usually, their high thermoelectric performance with ZT ̃ 1 is ascribed to the band convergence and reduced lattice thermal conductivity caused by alloying. In this work, both a low deformation potential = 13 eV and a low alloy scattering potential U = 0.7 eV are found for the thermoelectric alloys by characterizing and modeling of thermoelectric transport properties. The band convergence is also verified by the increased density-of-states effective mass. It is proposed that, in addition to band convergence and reduced lattice thermal conductivity, the low deformation potential and alloy scattering potential are additional intrinsic features that contribute to the high thermoelectric performance of the solid solutions.

Original languageEnglish (US)
Pages (from-to)1238-1244
Number of pages7
JournalAdvanced Energy Materials
Volume3
Issue number9
DOIs
StatePublished - Sep 2013

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • General Materials Science

Fingerprint

Dive into the research topics of 'Low electron scattering potentials in high performance Mg 2Si0.45Sn0.55 based thermoelectric solid solutions with band convergence'. Together they form a unique fingerprint.

Cite this