Low-energy ion-assisted epitaxy of InGaAsSb on InP (100)

R. Kaspi*, Scott A Barnett

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


InGaAsSb alloys were grown within the solid-phase miscibility gap, lattice matched to InP (100) substrates, using ion-assisted deposition. The alloy structure and properties were strongly dependent upon the energy E of Ar ions bombarding the growing film. Films deposited with E≤16 eV exhibited multiple (400) x-ray diffraction peaks and relatively low electron mobilities, indicating that there was significant alloy decomposition. Increasing E to 19-21 eV yielded single, sharp (400) x-ray peaks and increased the electron mobility, showing that ion irradiation suppressed decomposition. E≳22 eV resulted in ion damage as indicated by decreased mobilities and broadening of the x-ray peaks.

Original languageEnglish (US)
Pages (from-to)7904-7906
Number of pages3
JournalJournal of Applied Physics
Issue number11
StatePublished - Dec 1 1991

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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