LOW-ENERGY, ULTRAHIGH VACUUM, SOLID-METAL ION SOURCE FOR ACCELERATED-ION DOPING DURING MOLECULAR BEAM EPITAXY.

A. Rockett*, S. A. Barnett, J. E. Greene

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

The design and operation of a compact single-grid, ultrahigh-vacuum-compatible, low-energy ion gun capable of utilizing gaseous, liquid, or solid source material are described. The gun can provide greater than 100 mu A/cm**2 at ion energies ranging from 20 to 500 ev. In initial experiments for accelerated-ion doping of (100)Si and (100)GaAs, several orders of magnitude increases in elemental As and Zn incorporation probabilities were observed.

Original languageEnglish (US)
Pages (from-to)306-313
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume2
Issue number3
DOIs
StatePublished - Jan 1 1984

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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