Low-frequency electronic noise in single-layer MoS2 transistors

Vinod K. Sangwan, Heather N. Arnold, Deep Jariwala, Tobin J. Marks, Lincoln J. Lauhon, Mark C. Hersam*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

205 Scopus citations


Ubiquitous low-frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low-frequency electronic noise in single-layer transition metal dichalcogenide MoS2 field-effect transistors. The measured 1/f noise can be explained by an empirical formulation of mobility fluctuations with the Hooge parameter ranging between 0.005 and 2.0 in vacuum (<10-5 Torr). The field-effect mobility decreased, and the noise amplitude increased by an order of magnitude in ambient conditions, revealing the significant influence of atmospheric adsorbates on charge transport. In addition, single Lorentzian generation-recombination noise was observed to increase by an order of magnitude as the devices were cooled from 300 to 6.5 K.

Original languageEnglish (US)
Pages (from-to)4351-4355
Number of pages5
JournalNano letters
Issue number9
StatePublished - Sep 11 2013


  • 1/ f noise
  • Hooge parameter
  • Molybdenum disulfide
  • generation-recombination noise
  • nanoelectronics
  • transition metal dichalcogenide

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering


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