Low frequency noise in 1024×1024 long wavelength infrared focal plane array based on type-II InAs/GaSb superlattice

A. Haddadi*, S. R. Darvish, G. Chen, A. M. Hoang, B. M. Nguyen, M. Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Recently, the type-II InAs/GaSb superlattice (T2SL) material platform is considered as a potential alternative for HgCdTe technology in long wavelength infrared (LWIR) imaging. This is due to the incredible growth in the understanding of its material properties and improvement of device processing which leads to design and fabrication of better devices. In this paper, we report electrical low frequency noise measurement on a high performance type-II InAs/GaSb superlattice 1024×1024 LWIR focal plane array.

Original languageEnglish (US)
Title of host publicationQuantum Sensing and Nanophotonic Devices IX
DOIs
StatePublished - 2012
EventQuantum Sensing and Nanophotonic Devices IX - San Francisco, CA, United States
Duration: Jan 22 2012Jan 26 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8268
ISSN (Print)0277-786X

Other

OtherQuantum Sensing and Nanophotonic Devices IX
CountryUnited States
CitySan Francisco, CA
Period1/22/121/26/12

Keywords

  • 1/f noise
  • Large format focal plane array
  • infrared imaging
  • long wavelength infrared
  • photodetector
  • type-II superlattice

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Haddadi, A., Darvish, S. R., Chen, G., Hoang, A. M., Nguyen, B. M., & Razeghi, M. (2012). Low frequency noise in 1024×1024 long wavelength infrared focal plane array based on type-II InAs/GaSb superlattice. In Quantum Sensing and Nanophotonic Devices IX [82680X] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8268). https://doi.org/10.1117/12.913983