Low-loss electrooptic BaTiO3 thin film waveguide modulator

Pingsheng Tang; D. J. Towner; Anthony L. Meier; B. W. Wessels

doi:10.1109/LPT.2004.831255

Low-loss electrooptic BaTiO₃ thin film waveguide modulator

Pingsheng Tang^*, D. J. Towner, Anthony L. Meier, B. W. Wessels

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

A strip-loaded electrooptic waveguide modulator based on an epitaxial BaTiO₃ thin film was fabricated and characterized for the first time. The strip-loaded waveguide structure greatly improves waveguide propagation and polarization-dependent loss performance. A propagation loss of 1.1 dB/cm and polarization dependent loss of 0.1 dB/cm were measured. The electrooptic waveguide modulator exhibited a half-wave voltage-interaction length product of 4.5 V · cm at a wavelength of 1542 nm. The measured effective electrooptic coefficient of the as-grown BaTiO₃ waveguide modulator was 38 pm/V. The experimental results indicate that a strip-loaded thin film waveguide modulator is suitable for photonic applications.

Original language	English (US)
Pages (from-to)	1837-1839
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	16
Issue number	8
DOIs	https://doi.org/10.1109/LPT.2004.831255
State	Published - Aug 2004

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2004.831255

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title = "Low-loss electrooptic BaTiO3 thin film waveguide modulator",

abstract = "A strip-loaded electrooptic waveguide modulator based on an epitaxial BaTiO3 thin film was fabricated and characterized for the first time. The strip-loaded waveguide structure greatly improves waveguide propagation and polarization-dependent loss performance. A propagation loss of 1.1 dB/cm and polarization dependent loss of 0.1 dB/cm were measured. The electrooptic waveguide modulator exhibited a half-wave voltage-interaction length product of 4.5 V · cm at a wavelength of 1542 nm. The measured effective electrooptic coefficient of the as-grown BaTiO3 waveguide modulator was 38 pm/V. The experimental results indicate that a strip-loaded thin film waveguide modulator is suitable for photonic applications.",

author = "Pingsheng Tang and Towner, {D. J.} and Meier, {Anthony L.} and Wessels, {B. W.}",

note = "Funding Information: Manuscript received February 23, 2004; revised April 4, 2004. This work was supported by the Air Force under Contract AFRL-33615-02-C-5053, and by the National Science Foundation (NSF) under Contracts ECS-0123469 and DMR-0076977.",

year = "2004",

month = aug,

doi = "10.1109/LPT.2004.831255",

language = "English (US)",

volume = "16",

pages = "1837--1839",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

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T1 - Low-loss electrooptic BaTiO3 thin film waveguide modulator

AU - Tang, Pingsheng

AU - Towner, D. J.

AU - Meier, Anthony L.

AU - Wessels, B. W.

N1 - Funding Information: Manuscript received February 23, 2004; revised April 4, 2004. This work was supported by the Air Force under Contract AFRL-33615-02-C-5053, and by the National Science Foundation (NSF) under Contracts ECS-0123469 and DMR-0076977.

PY - 2004/8

Y1 - 2004/8

N2 - A strip-loaded electrooptic waveguide modulator based on an epitaxial BaTiO3 thin film was fabricated and characterized for the first time. The strip-loaded waveguide structure greatly improves waveguide propagation and polarization-dependent loss performance. A propagation loss of 1.1 dB/cm and polarization dependent loss of 0.1 dB/cm were measured. The electrooptic waveguide modulator exhibited a half-wave voltage-interaction length product of 4.5 V · cm at a wavelength of 1542 nm. The measured effective electrooptic coefficient of the as-grown BaTiO3 waveguide modulator was 38 pm/V. The experimental results indicate that a strip-loaded thin film waveguide modulator is suitable for photonic applications.

AB - A strip-loaded electrooptic waveguide modulator based on an epitaxial BaTiO3 thin film was fabricated and characterized for the first time. The strip-loaded waveguide structure greatly improves waveguide propagation and polarization-dependent loss performance. A propagation loss of 1.1 dB/cm and polarization dependent loss of 0.1 dB/cm were measured. The electrooptic waveguide modulator exhibited a half-wave voltage-interaction length product of 4.5 V · cm at a wavelength of 1542 nm. The measured effective electrooptic coefficient of the as-grown BaTiO3 waveguide modulator was 38 pm/V. The experimental results indicate that a strip-loaded thin film waveguide modulator is suitable for photonic applications.

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

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Low-loss electrooptic BaTiO₃ thin film waveguide modulator

Abstract

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