Modulateurs a faibles pertes dans InGaAsP/InP

Yannic Bourbin; Alain Enard; Robert Blondeau; Manijeh Razeghi; Daniel Rondi; Michel Papuchon; Baudouin de Cremoux

Modulateurs a faibles pertes dans InGaAsP/InP

Translated title of the contribution: Low loss modulators in InGaAsP/InP material

Yannic Bourbin^*, Alain Enard, Robert Blondeau, Manijeh Razeghi, Daniel Rondi, Michel Papuchon, Baudouin de Cremoux

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Semiconductor materials have already shown their ability, within increasingly improving realizations, in light sources and detectors elaboration for the visible and infrared spectral regions. In parallel with those achievements, integrated optics has shown the possibility for efficient phase or amplitude modulation of guided waves in a single mode regime in substrates like lithium niobate. III-V compounds reveal themselves excellent candidates for working out monolithic integration of those sources and modulators. The goal of this article is to present an original guiding structure based on InGaAsP quaternary compounds on InP substrates and designed for the near infrared (1.3-1.5 μm) as well as results of propagation losses (0.4 db/cm) and modulation efficiency (5°/V/mm).

Translated title of the contribution	Low loss modulators in InGaAsP/InP material
Original language	French
Pages (from-to)	639-656
Number of pages	18
Journal	Revue technique - Thomson-CSF
Volume	19
Issue number	3-4
State	Published - Sep 1 1987

ASJC Scopus subject areas

General Engineering

Cite this

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abstract = "Semiconductor materials have already shown their ability, within increasingly improving realizations, in light sources and detectors elaboration for the visible and infrared spectral regions. In parallel with those achievements, integrated optics has shown the possibility for efficient phase or amplitude modulation of guided waves in a single mode regime in substrates like lithium niobate. III-V compounds reveal themselves excellent candidates for working out monolithic integration of those sources and modulators. The goal of this article is to present an original guiding structure based on InGaAsP quaternary compounds on InP substrates and designed for the near infrared (1.3-1.5 μm) as well as results of propagation losses (0.4 db/cm) and modulation efficiency (5°/V/mm).",

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AU - Bourbin, Yannic

AU - Enard, Alain

AU - Blondeau, Robert

AU - Razeghi, Manijeh

AU - Rondi, Daniel

AU - Papuchon, Michel

AU - de Cremoux, Baudouin

PY - 1987/9/1

Y1 - 1987/9/1

N2 - Semiconductor materials have already shown their ability, within increasingly improving realizations, in light sources and detectors elaboration for the visible and infrared spectral regions. In parallel with those achievements, integrated optics has shown the possibility for efficient phase or amplitude modulation of guided waves in a single mode regime in substrates like lithium niobate. III-V compounds reveal themselves excellent candidates for working out monolithic integration of those sources and modulators. The goal of this article is to present an original guiding structure based on InGaAsP quaternary compounds on InP substrates and designed for the near infrared (1.3-1.5 μm) as well as results of propagation losses (0.4 db/cm) and modulation efficiency (5°/V/mm).

AB - Semiconductor materials have already shown their ability, within increasingly improving realizations, in light sources and detectors elaboration for the visible and infrared spectral regions. In parallel with those achievements, integrated optics has shown the possibility for efficient phase or amplitude modulation of guided waves in a single mode regime in substrates like lithium niobate. III-V compounds reveal themselves excellent candidates for working out monolithic integration of those sources and modulators. The goal of this article is to present an original guiding structure based on InGaAsP quaternary compounds on InP substrates and designed for the near infrared (1.3-1.5 μm) as well as results of propagation losses (0.4 db/cm) and modulation efficiency (5°/V/mm).

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Modulateurs a faibles pertes dans InGaAsP/InP

Abstract

ASJC Scopus subject areas

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