Modulateurs a faibles pertes dans InGaAsP/InP

Translated title of the contribution: Low loss modulators in InGaAsP/InP material

Yannic Bourbin*, Alain Enard, Robert Blondeau, Manijeh Razeghi, Daniel Rondi, Michel Papuchon, Baudouin de Cremoux

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Semiconductor materials have already shown their ability, within increasingly improving realizations, in light sources and detectors elaboration for the visible and infrared spectral regions. In parallel with those achievements, integrated optics has shown the possibility for efficient phase or amplitude modulation of guided waves in a single mode regime in substrates like lithium niobate. III-V compounds reveal themselves excellent candidates for working out monolithic integration of those sources and modulators. The goal of this article is to present an original guiding structure based on InGaAsP quaternary compounds on InP substrates and designed for the near infrared (1.3-1.5 μm) as well as results of propagation losses (0.4 db/cm) and modulation efficiency (5°/V/mm).

Translated title of the contributionLow loss modulators in InGaAsP/InP material
Original languageFrench
Pages (from-to)639-656
Number of pages18
JournalRevue technique - Thomson-CSF
Issue number3-4
StatePublished - Sep 1 1987

ASJC Scopus subject areas

  • Engineering(all)


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