Low noise short wavelength infrared avalanche photodetector using sb-based strained layer superlattice

Arash Dehzangi, Jiakai Li, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We demonstrate low noise short wavelength infrared (SWIR) Sb-based type II superlattice (T2SL) avalanche photodiodes (APDs). The SWIR GaSb/(AlAsSb/GaSb) APD structure was designed based on impact ionization engineering and grown by molecular beam epitaxy on a GaSb substrate. At room temperature, the device exhibits a 50% cut-off wavelength of 1.74 µm. The device was revealed to have an electron-dominated avalanching mechanism with a gain value of 48 at room temperature. The electron and hole impact ionization coefficients were calculated and compared to give a better prospect of the performance of the device. Low excess noise, as characterized by a carrier ionization ratio of ~0.07, has been achieved.

Original languageEnglish (US)
Article number148
JournalPhotonics
Volume8
Issue number5
DOIs
StatePublished - May 2021

Keywords

  • Avalanche photodiode
  • Carrier ionization ratio
  • Short wavelength infrared
  • Superlattice

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Instrumentation
  • Radiology Nuclear Medicine and imaging

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